Exothermic reactive bonding for semiconductor die assemblies, and associated systems and methods are disclosed. In an embodiment, a semiconductor die includes a dielectric layer having a conductive pad, where at least a portion of a surface of the dielectric layer includes a first epoxy compound. When another semiconductor die including a second epoxy compound (and another conductive pad) is brought in contact with the semiconductor die such that the first and second epoxy compounds can exothermically react, the thermal energy emanating from the exothermic reaction can facilitate bonding between the conductive pads to form interconnects between the two semiconductor dies. In some cases, the thermal energy is sufficient to form the interconnects. In other cases, the thermal energy assists the post bond annealing process to form the interconnects such that the annealing can be carried out at a lower temperature.

A semiconductor device includes a first substrate, an insulation layer, and a first electrode. The first substrate contains a first semiconductor material. The insulation layer includes a first surface, a second surface, and a third surface. The first electrode includes a fourth surface, a fifth surface, and a sixth surface, and contains a porous first conductive material. The second surface and the fifth surface configure the same surface. The third surface faces the sixth surface. A distance between the first surface and the first substrate is less than a distance between the second surface and the first substrate. A distance between the fourth surface and the first substrate is less than a distance between the fifth surface and the first substrate.

A method for manufacturing a display device includes preparing a circuit board including a drive circuit for driving a LED chip, forming a connecting electrode on the circuit board, forming an adhesive layer on the connecting electrode, adhering a terminal electrode of the LED chip on the adhesive layer and joining the connecting electrode and the terminal electrode by irradiating a laser light. The adhesive layer may be formed only on a upper surface of the connecting electrode.

A method for forming a three-dimensional memory device includes forming, on a first side of a first substrate, a plurality of semiconductor devices including at least first and second semiconductor devices, a first interconnect layer, and a shallow trench isolation (STI) structure between the semiconductor devices, and forming, on a second substrate, a memory array including a plurality of memory cells and a second interconnect layer. The method includes connecting the first and second interconnect layers and forming an isolation trench through the first substrate and exposing a portion of the STI structure. The isolation trench is formed through a second side of the first substrate that is opposite to the first side. The method includes disposing an isolation material to form an isolation structure in the isolation trench and performing a planarization process to remove portions of the isolation material disposed on the second side of the first substrate.

A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

An electronic module includes a substrate that includes a first main surface and a second main surface, at least one first electronic component that includes electrodes on a mounting surface thereof on the substrate and that includes a hollow portion, at least one second electronic component that includes electrodes on a mounting surface thereof on the substrate and that includes no hollow portion, and a sealing resin. The at least one first electronic component is mounted on the first main surface of the substrate and sealed with the sealing resin. The at least one second electronic component is mounted on the second main surface of the substrate and is not sealed with the sealing resin.

A bonding apparatus includes a holding element, holding element actuators, sensors, a controller and bond force adjusting actuators. In use, the holding element holds an electrical component and is moved by the holding element actuators in one or more actuating directions to contact the electrical component with a base member. The sensors measure reaction forces exerted on the holding element in response to contact between the electrical component and the base member. The controller determines bond forces to be exerted on actuating areas of the holding element during a bonding process based on the measured reaction forces, and the bond force adjusting actuators exert these bond forces on the actuating areas of the holding element during the bonding process, so as to adjust a tilt of the electrical component relative to the base member.

A bonding apparatus includes a holding element, holding element actuators, sensors, a controller and bond force adjusting actuators. In use, the holding element holds an electrical component and is moved by the holding element actuators in one or more actuating directions to contact the electrical component with a base member. The sensors measure reaction forces exerted on the holding element in response to contact between the electrical component and the base member. The controller determines bond forces to be exerted on actuating areas of the holding element during a bonding process based on the measured reaction forces, and the bond force adjusting actuators exert these bond forces on the actuating areas of the holding element during the bonding process, so as to adjust a tilt of the electrical component relative to the base member.

A method for forming a three-dimensional memory device includes forming, on a first side of a first substrate, a plurality of semiconductor devices including at least first and second semiconductor devices, a first interconnect layer, and a shallow trench isolation (STD structure between the semiconductor devices, and forming, on a second substrate, a memory array including a plurality of memory cells and a second interconnect layer. The method includes connecting the first and second interconnect layers and forming an isolation trench through the first substrate and exposing a portion of the STI structure. The isolation trench is formed through a second side of the first substrate that is opposite to the first side. The method includes disposing an isolation material to form an isolation structure in the isolation trench and performing a planarization process to remove portions of the isolation material disposed on the second side of the first substrate.