A bonding apparatus includes an ultrasonic oscillator which generates ultrasonic vibration, a stage disposed under the ultrasonic oscillator, and an embossed sheet disposed between the ultrasonic oscillator and the stage. The embossed sheet includes a body and a plurality of protrusions protruding downward from a lower surface of the body which faces the stage.

Provided is a semiconductor chip mounting tape. The semiconductor chip mounting tape comprises a tape base film including first and second surfaces opposite to each other; and an adhesive film including a third surface facing the first surface of the tape base film, and a fourth surface opposite to the third surface, wherein the adhesive film includes a plurality of voids therein, and the fourth surface of the adhesive film may be adhered to a semiconductor chip.

An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide methods of making an electronic device, and electronic devices made thereby, that comprise forming first and second encapsulating materials, followed by further processing and the removal of the entire second encapsulating material.

Provided are a device packing facility and method using phthalate and a device processing apparatus utilizing the phthalate. The device packaging facility includes a mounting unit providing phthalate between first and second devices to attach the first and second devices to each other, a processing unit thermally processing the first and second devices that are attached to each other to remove the phthalate and fix the first and second devices to each other, and a transfer unit transferring the first and second devices that are attached to each other from the mounting unit to the processing unit.

An apparatus includes a first component layer. The component layer includes a first semiconductor device. The apparatus further includes a first hydrophilic layer and a first hydrophobic layer. The first hydrophobic layer is positioned between the first component layer and the first hydrophilic layer. The apparatus further includes a first contact extending through the first hydrophobic layer and the first hydrophilic layer.

Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process:

[00001]$0\leqq .Math.{\int }_{T1}^{T2}A\left(T\right)\mathrm{dT}-{\int }_{T1}^{T3}E\left(T\right)\mathrm{dT}.Math.<0.01$ wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

The present disclosure discloses a semiconductor device structure with an air gap for reducing capacitive coupling and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive pad over a first semiconductor substrate, and a first conductive structure over the first conductive pad. The semiconductor device structure also includes a second conductive structure over the first conductive structure, and a second conductive pad over the second conductive structure. The second conductive pad is electrically connected to the first conductive pad through the first and the second conductive structures. The semiconductor device structure further includes a second semiconductor substrate over the second conductive pad, a first passivation layer between the first and the second semiconductor substrates and covering the first conductive structure, and a second passivation layer between the first passivation layer and the second semiconductor substrate. The first and the second passivation layers surround the second conductive structure, and a first air gap is enclosed by the first and the second passivation layers.

A method of manufacturing a mounting substrate, the method includes: transferring part or all of a plurality of devices on a device substrate onto a wiring substrate, and temporarily fixing the transferred devices to the wiring substrate with use of a fixing layer having viscosity, the device substrate including a support substrate and the plurality of devices fixed on the support substrate; and performing a reflow process on the wiring substrate to electrically connect the transferred devices with the wiring substrate, and thereby forming the mounting substrate.

Provided is a method of manufacturing a structure that can be easily bonded to a bonding target. The method of manufacturing a structure includes: a conductive layer forming step of forming a conductive layer having conductivity on a part of a surface of an insulating support including at least one surface; a valve metal layer forming step of forming a valve metal layer that covers at least a part of the conductive layer; an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode; a micropore forming step of forming a plurality of micropores that extend in a thickness direction on the anodic oxidation film; and a filling step of filling the micropores with a conductive material, in which a valve metal layer removing step of removing the valve metal layer having undergone the anodic oxidation film forming step is performed between the anodic oxidation film forming step and the filling step.

A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods that enhance or control laser irradiation of a semiconductor die, for example spatially and/or temporally, to improve bonding of the semiconductor die to a substrate.