A method for assembling components includes assembling a first component including solder bumps with a second component including connectors. The assembly of the components is preceded by pre-treating the first and second components wherein the solder bumps are contacted with a pre-treatment liquid configured to at least partially remove an oxide layer initially present on the solder. The pre-treatment liquid is an aqueous solution containing carboxylic acids or polycarboxylic acids. The assembly of the components is carried out after the pre-treatment in the absence of liquid or gas flux.

A method of fabricating a connection structure is disclosed. The method includes providing a substrate that has a top surface and includes a set of pads for soldering, each of which has a pad surface exposed from the top surface of the substrate. The method also includes applying a surface treatment to a part of the top surface of the substrate close to the pads and the pad surface of each pad so as to make at least the part of the top surface and the pad surfaces of the pads rougher. The surface treatment includes sandblasting.

A printed wiring board includes a resin insulating layer, a metal post formed in the resin insulating layer such that the metal post is protruding from a first surface of the resin insulating layer, a conductor layer formed on a second surface of the resin insulating layer on the opposite side with respect to the first surface of the resin insulating layer, and a via conductor formed in the resin insulating layer such that the via conductor is penetrating through the resin insulating layer and connecting the metal post and the conductor layer. The metal post has a protruding portion protruding from the first surface of the resin insulating layer and an embedded portion integrally formed with the protruding portion and embedded in the resin insulating layer.

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

A substrate bonding apparatus that bonds a first substrate and a second substrate together, comprising a joining section that joins the first substrate and second substrate together aligned to each other for stacking; a detecting section that detects an uneven state on at least one of the first substrate and second substrate prior to joining by the joining section; and a determining section that determines whether the uneven state detected by the detecting section satisfies a predetermined condition, wherein the joining section does not join the first substrate and the second substrate if it is determined by the determining section that the uneven state does not satisfy the predetermined condition.

A packaging method and a packaging structure of a multi-layer stacked high-bandwidth memory are provided. The packaging method includes respectively providing a substrate and a plurality of memory chips. The packaging method also includes sequentially forming a plurality of first conductive bumps and a plurality of second conductive bumps on a first surface of the memory chip; and forming a plurality of pads on a second surface of the memory chip. In addition, the packaging method includes nesting a second conductive bump and a pad on every adjacent two memory chips through a thermal compression bonding process, to insulate and sequentially stack the plurality of memory chips over the substrate. Further, the method includes performing a reflow soldering process on the plurality of stacked memory chips and the substrate; and forming a plastic encapsulation layer to wrap the plurality of memory chips and the substrate.

A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.

A fluxless bonding process is provided. An array of micro solder bumps of a first semiconductor structure is aligned to an array of bonding pads of a second semiconductor structure under an applied bonding force. An environment is provided to prevent oxides from forming on the solder bump structures and bonding pads during the bonding process. A scrubbing process is performed at a given scrubbing frequency and amplitude to scrub the micro solder bumps against the bonding pads in a direction perpendicular to the bonding. Heat is applied to at least the first semiconductor structure to melt and bond the micro solder bumps to the bonding pads. The first semiconductor structure is cooled down to solidify the molten solder. Coplanarity is maintained between the bonding surfaces of the semiconductor structures within a given tolerance during the scrubbing and cooling steps until solidification of the micro solder bumps.

The present disclosure provides a semiconductor package, including a first device having a first joining surface, a first conductive component at least partially protruding from the first joining surface, a second device having a second joining surface facing the first joining surface, and a second conductive component at least exposing from the second joining surface. The first conductive component and the second conductive component form a joint having a first beak. The first beak points to either the first joining surface or the second joining surface.

A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.