This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

Disclosed is a method of bonding two copper structures involving compressing a first copper structure with a second copper structure under a stress from 0.1 MPa to 50 MPa and under a temperature of 250 C. or less so that a bonding surface of the first copper structure is bonded to a bonding surface of the second copper structure; at least one of the bonding surface of the first copper structure and the bonding surface of the second copper structure have a layer of nanograins of copper having an average grain size of 5 nm to 500 nm, the layer of the nanograins of copper having a thickness of 10 nm to 10 m.

The purpose is, in mounting a semiconductor device onto a substrate, to make it easy to identify the remaining amount of an auxiliary joining agent, to stabilize the dispensing amount of the auxiliary joining agent, and to prevent a shortage of the auxiliary joining agent. Also for the purpose of efficient maintenance of a mounting machine, provided is an auxiliary joining agent adapted to aid joining of metals and prepared by dissolving a colorant in a solvent having a reducing property of removing an oxide film on a metal surface. The auxiliary joining agent is produced by a method including a step of mixing a solvent having a reducing property of removing an oxide film on a metal surface, and a colorant having a property of dissolving in the solvent.

The purpose is, in mounting a semiconductor device onto a substrate, to make it easy to identify the remaining amount of an auxiliary joining agent, to stabilize the dispensing amount of the auxiliary joining agent, and to prevent a shortage of the auxiliary joining agent. Also for the purpose of efficient maintenance of a mounting machine, provided is an auxiliary joining agent adapted to aid joining of metals and prepared by dissolving a colorant in a solvent having a reducing property of removing an oxide film on a metal surface. The auxiliary joining agent is produced by a method including a step of mixing a solvent having a reducing property of removing an oxide film on a metal surface, and a colorant having a property of dissolving in the solvent.