Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I):
(M.sub.1−M.sub.2)/M.sub.1×100≥1.0  (I)
[in Formula (I), M.sub.1 represents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and M.sub.2 represents a non-volatile content in the joining material.]

Provided is a semiconductor chip mounting tape. The semiconductor chip mounting tape comprises a tape base film including first and second surfaces opposite to each other; and an adhesive film including a third surface facing the first surface of the tape base film, and a fourth surface opposite to the third surface, wherein the adhesive film includes a plurality of voids therein, and the fourth surface of the adhesive film may be adhered to a semiconductor chip.

Provided are a device packing facility and method using DEHT and a device processing apparatus utilizing the DEHT. The device packaging facility includes a mounting unit providing bis(2-ethylhexyl) terephthalate (DEHT) between first and second devices to attach the first and second devices to each other, a processing unit thermally processing the first and second devices that are attached to each other to remove the DEHT and fix the first and second devices to each other, and a transfer unit transferring the first and second devices that are attached to each other from the mounting unit to the processing unit.

Provided are a device packing facility and method using phthalate and a device processing apparatus utilizing the phthalate. The device packaging facility includes a mounting unit providing phthalate between first and second devices to attach the first and second devices to each other, a processing unit thermally processing the first and second devices that are attached to each other to remove the phthalate and fix the first and second devices to each other, and a transfer unit transferring the first and second devices that are attached to each other from the mounting unit to the processing unit.

Provided is a semiconductor device including a conductive member including a main surface facing one side in a thickness direction; a semiconductor element including a plurality of pads facing the main surface of the conductive member; and a plurality of electrodes protruding from the plurality of pads toward the other side in the thickness direction. The conductive member includes a plurality of recessed portions recessed from the main surface toward the other side in the thickness direction. The semiconductor device further includes a bonding layer that is conductive and that is arranged in each of the plurality of recessed portions. The plurality of electrodes are separately inserted into the plurality of recessed portions. The conductive member and the plurality of electrodes are bonded through the bonding layers.

Provided is a semiconductor chip mounting tape. The semiconductor chip mounting tape comprises a tape base film including first and second surfaces opposite to each other; and an adhesive film including a third surface facing the first surface of the tape base film, and a fourth surface opposite to the third surface, wherein the adhesive film includes a plurality of voids therein, and the fourth surface of the adhesive film may be adhered to a semiconductor chip.

A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H.sub.2/N.sub.2, H.sub.2/Ar, H.sub.2/He, NH.sub.3/N.sub.2, NH.sub.3/Ar, or NH.sub.3/He and the chip and substrate may be maintained in a low oxygen environment.

Provided are a device packing facility and method using DEHT and a device processing apparatus utilizing the DEHT. The device packaging facility includes a mounting unit providing bis(2-ethylhexyl) terephthalate (DEHT) between first and second devices to attach the first and second devices to each other, a processing unit thermally processing the first and second devices that are attached to each other to remove the DEHT and fix the first and second devices to each other, and a transfer unit transferring the first and second devices that are attached to each other from the mounting unit to the processing unit.

A method of manufacturing a semiconductor device in which a prescribed target lamination number of semiconductor chips are laminated on a substrate, the method includes: a first lamination step of laminating while temporarily bonding one or more semiconductor chips on the substrate to thereby form a first chip laminate body; a first permanent bonding step of pressurizing while heating from the upper side of the first chip laminate body to thereby collectively and permanently bond the one or more semiconductor chips; a second lamination step of sequentially laminating while temporarily bonding two or more semiconductor chips on the permanently bonded semiconductor chips to thereby form a second chip laminate body; and a second permanent bonding step of pressurizing while heating from the upper side of the second chip laminate body to thereby collectively permanently bond the two or more semiconductor chips.

Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I):

(M.sub.1M.sub.2)/M.sub.11001.0(I)

[in Formula (I), M.sub.1 represents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and M.sub.2 represents a non-volatile content in the joining material.]