Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 μm to about 100 μm, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

A substrate bonding apparatus that bonds a first substrate and a second substrate together, comprising a joining section that joins the first substrate and second substrate together aligned to each other for stacking; a detecting section that detects an uneven state on at least one of the first substrate and second substrate prior to joining by the joining section; and a determining section that determines whether the uneven state detected by the detecting section satisfies a predetermined condition, wherein the joining section does not join the first substrate and the second substrate if it is determined by the determining section that the uneven state does not satisfy the predetermined condition.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

A bonding apparatus has a bonding platform including a top plate for supporting a fragile semiconductor substrate during interconnect bonding operations conducted on the substrate. Vacuum holes situated on the top plate, forming a first vacuum section, a second vacuum section, and a third vacuum section located between the first and second vacuum sections, generate vacuum suction forces on the substrate during bonding. Individually controllable first, second and third vacuum supplies are connected to the first, second and third vacuum sections respectively. The first and second vacuum supplies cooperate at a first bonding position to generate a vacuum suction force at the first and second vacuum sections, and the second and third vacuum supplies cooperate at a second bonding to position to generate a vacuum suction force at the second and third vacuum sections.

A manufacturing apparatus of a semiconductor device includes a stage, a head unit configured to face the stage, a driving unit configured to move the head unit towards and away from the stage, a heating unit configured to heat the head unit, and a control unit configured to control the driving unit to move the head unit away from the stage when the heating unit heats the head unit.