A die attach system is provided. The die attach system includes: a support structure for supporting a substrate; a die supply source including a plurality of die for attaching to the substrate; and a bond head for bonding a die from the die supply source to the substrate, the bond head including a bond tool having a contact portion for contacting the die during a transfer from the die supply source to the substrate, the bond head including a spring portion engaged with the bond tool such that the spring portion is configured to compress during pressing of the die against the substrate using the contact portion of the bond tool.

A die attach system is provided. The die attach system includes: a support structure for supporting a substrate; a die supply source including a plurality of die for attaching to the substrate; and a bond head for bonding a die from the die supply source to the substrate, the bond head including a bond tool having a contact portion for contacting the die during a transfer from the die supply source to the substrate, the bond head including a spring portion engaged with the bond tool such that the spring portion is configured to compress during pressing of the die against the substrate using the contact portion of the bond tool.

A bonding device for bonding an electronic element includes an engaging component. The engaging component has a first surface and a second surface opposite to the first surface. The engaging component includes a plurality of recesses at the second surface. The plurality of recesses are configured to cover a plurality of projections of an electronic element. The engaging component is coupled to a heating component.

According to one embodiment, a method of manufacturing a semiconductor device includes forming a metal bump on a first surface side of a semiconductor chip, positioning the semiconductor chip so the metal bump contacts a pad of an interconnection substrate, and applying a first light from a second surface side of the semiconductor chip and melting the metal bump with the first light. After the melting, the melted metal bump is allowed to resolidify by stopping or reducing the application of the first light. The semiconductor chip is then pressed toward the interconnection substrate. A second light is then applied from the second surface side of the semiconductor chip while the semiconductor chip is being pressed toward the interconnection substrate to melt the metal bump. After the melting, the melted metal bump is allowed to resolidify by the stopping or reducing of the application of the second light.

An underfill film for a semiconductor package and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film is suitable for a semiconductor package, which, by including an adhesive layer having low lowest melt viscosity, can improve the connection reliability of a package by minimizing the formation of voids during semiconductor packaging.

An electronic device includes a first structure body and a second structure body. The first structure body includes a first base body, a first bonding electrode and a first hard part. The second structure body includes a second base body, and a second bonding electrode. The first bonding electrode and the second bonding electrode are bonded to each other between the first base body and the second base body. The first hard part is located between the first base body and the second base body. The first hard part is positioned within an area in which the first bonding electrode is located when viewed along a first direction. The first direction is from the first base body toward the first bonding electrode. The first hard part has a higher hardness than the first bonding electrode.

A bonding structure is provided, including a first substrate; a second substrate disposed opposite the first substrate; a first bonding layer disposed on the first substrate; a second bonding layer disposed on the second substrate and opposite the first bonding layer; and a silver feature disposed between the first bonding layer and the second bonding layer. The silver feature includes a silver nano-twinned structure including parallel twin boundaries. The silver nano-twinned structure includes 90% or more [111] crystal orientation. A method for forming a bonding structure is also provided. Each of steps of forming a first silver feature and second silver feature includes sputtering or evaporation coating. Negative bias ion bombardment is applied to the first silver feature and second silver feature during sputtering or evaporation.

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate. The semiconductor module also includes a semiconductor device having a collector electrode arranged on its upper surface, having an emitter electrode and a gate electrode arranged on its lower surface, and bumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern. Each of the bumps is made of a metal sintered material such that the bump is formed to be constricted in its middle portion in a thickness direction orthogonal to a surface of the insulating plate.

Various embodiments of the teachings herein include a method for joining and insulating a power electronic semiconductor component with contact surfaces to a substrate. In some embodiments, the method includes: preparing the substrate with a metallization defining an installation slot having joining material, wherein the substrate comprises an organic or a ceramic wiring support; arranging an electrically insulating film and the semiconductor component on the substrate, such that the contact surfaces of the semiconductor component facing the substrate are omitted from the film and regions of the semiconductor component exposed by the contact surfaces are insulated at least in part by the film from the substrate and from the contact surfaces; and joining the semiconductor component to the substrate and electrically insulating the semiconductor component at least in part by the film in one step.

A bonding apparatus for bonding a driving circuit to a display panel includes: a bonding stage unit on which the display panel is supported in bonding the driving circuit to the display panel; a head unit located above the bonding stage unit and with which ultrasonic waves are applied to the driving circuit to couple the driving circuit with a bonding area of the display panel supported on the bonding stage unit; and a protrusion disposed at an edge portion of the bonding stage unit, the edge portion corresponding to an end of the display panel at which the bonding area is disposed.