In an embodiment a method for producing a semiconductor component comprising at least one semiconductor chip mounted on a surface, wherein the semiconductor chip is fixed on the surface by applying a solder compound to an assembling surface of the semiconductor chip, applying a metallic adhesive layer to a side of the solder compound facing away from the assembling surface, preheating the surface to a first temperature T1, bringing the metallic adhesive layer into mechanical contact in a solid state with the preheated surface, the metallic adhesive layer at least partially melting while it is brought into mechanical contact with the preheated surface, and subsequently cooling the surface to room temperature, the semiconductor chip being at least partially metallurgically bonded to the surface, and wherein the semiconductor chip is subsequently soldered to the surface to form a resulting solder connection.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

A semiconductor package includes a package substrate and a semiconductor chip mounted on the package substrate. The package substrate includes a signal bump land and an anchoring bump land, and the semiconductor chip includes a signal bump and an anchoring bump. The signal bump is bonded to the signal bump land, the anchoring bump is disposed to be adjacent to the anchoring bump land, and a bottom surface of the anchoring bump is located at a level which is lower than a top surface of the anchoring bump land with respect to a surface of the package substrate.

A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.

A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.

A semiconductor device includes a semiconductor substrate configured to include a first electrode layer, and a first barrier layer provided on the first electrode layer and bonded to a metal layer, and a circuit substrate configured to include a second electrode layer, and a second barrier layer provided on the second electrode layer and bonded to the metal layer, wherein the semiconductor substrate including a semiconductor element, and the circuit substrate are bonded via the metal layer containing Sn, a linear expansion coefficient of the first barrier layer is larger than that of the circuit substrate, and a linear expansion coefficient of the second barrier layer is smaller than that of the circuit substrate.

A semiconductor device package and a fabrication method thereof are disclosed. The semiconductor package comprises: a package component having a first mounting surface and a second mounting surface; and a first electronic component having a first conductive pad signal communicatively mounted on the first mounting surface through a first type connector; wherein the first type connector comprises a first solder composition having a lower melting point layer sandwiched between a pair of higher melting point layers, wherein the lower melting point layer is composed of alloys capable of forming a room temperature eutectic.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.