According to one embodiment, a method of manufacturing a semiconductor device includes forming a metal bump on a first surface side of a semiconductor chip, positioning the semiconductor chip so the metal bump contacts a pad of an interconnection substrate, and applying a first light from a second surface side of the semiconductor chip and melting the metal bump with the first light. After the melting, the melted metal bump is allowed to resolidify by stopping or reducing the application of the first light. The semiconductor chip is then pressed toward the interconnection substrate. A second light is then applied from the second surface side of the semiconductor chip while the semiconductor chip is being pressed toward the interconnection substrate to melt the metal bump. After the melting, the melted metal bump is allowed to resolidify by the stopping or reducing of the application of the second light.

The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

A heat assisted flip chip bonding apparatus includes a semiconductor assembly having a substrate and a chip, a heating source and a press and cover assembly having a cover element and press elements. The chip is disposed above the substrate and includes conductors which contact with conductive pads on the substrate. The heating source is provided to emit a heated light which illuminates the chip via an opening of the cover element. The press elements are located between the cover element and the semiconductor assembly and each includes an elastic unit and a pressing unit. Both ends of the elastic unit are connected to the cover element and the pressing unit respectively, and the pressing unit is provided to press a back surface of the chip.

A method for transferring an electronic device includes steps as follows. A flexible carrier is provided and has a surface with a plurality of electronic devices disposed thereon. A target substrate is provided corresponding to the surface of the flexible carrier. A pin is provided, and a pin end thereof presses on another surface of the flexible carrier without the electronic devices disposed thereon, so that the flexible carrier is deformed, causing at least one of the electronic devices to move toward the target substrate and to be in contact with the target substrate. A beam is provided to transmit at least a portion of the pin and emitted from the pin end to melt a solder. The electronic device is fixed on the target substrate by soldering. The pin is moved to restore the flexible carrier to its original shape, allowing the electronic device fixed by soldering to separate from the carrier.

Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I):
(M.sub.1−M.sub.2)/M.sub.1×100≥1.0  (I)
[in Formula (I), M.sub.1 represents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and M.sub.2 represents a non-volatile content in the joining material.]

Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I):
(M.sub.1−M.sub.2)/M.sub.1×100≥1.0  (I)
[in Formula (I), M.sub.1 represents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and M.sub.2 represents a non-volatile content in the joining material.]

A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.

A heat assisted flip chip bonding apparatus includes a semiconductor assembly having a substrate and a chip, a heating source and a press and cover assembly having a cover element and press elements. The chip is disposed above the substrate and includes conductors which contact with conductive pads on the substrate. The heating source is provided to emit a heated light which illuminates the chip via an opening of the cover element. The press elements are located between the cover element and the semiconductor assembly and each includes an elastic unit and a pressing unit. Both ends of the elastic unit are connected to the cover element and the pressing unit respectively, and the pressing unit is provided to press a back surface of the chip.

Tools and systems for processing semiconductor devices, and methods of processing semiconductor devices are disclosed. In some embodiments, a method of using a tool for processing semiconductor devices includes a tool with a second material disposed over a first material, and a plurality of apertures disposed within the first material and the second material. The second material comprises a higher reflectivity than the first material. Each of the apertures is adapted to retain a package component over a support during an exposure to energy.