An electronic component includes a device die and a substrate. The device die includes conductive contacts with conductive pillars conductively affixed to conductive contact. The conductive pillars include a cavity formed in an end of the conductive pillar opposite the conductive contact. The substrate includes of conductive pads that are each associated with one of the conductive contacts. The conductive pads include a conductive pad conductively affixed to the substrate, and a conductive ring situated within a cavity in the end conductive rings have a capillary formed along an axis of the conductive ring. A solder material fills the capillary of each of the conductive rings and the cavity formed in the end of the associated conductive pillars to form a conductive joint between the pillars and the conductive pads.

A chip includes a semiconductor substrate, integrated circuits with at least portions in the semiconductor substrate, and a surface dielectric layer over the integrated circuits. A plurality of metal pads is distributed substantially uniformly throughout substantially an entirety of a surface of the chip. The plurality of metal pads has top surfaces level with a top surface of the surface dielectric layer. The plurality of metal pads includes active metal pads and dummy metal pads. The active metal pads are electrically coupled to the integrated circuits. The dummy metal pads are electrically decoupled from the integrated circuits.

Semiconductor packages having a first layer interconnect portion that includes a coaxial interconnect between a die and a package substrate are described. In an example, the package substrate includes a substrate-side coaxial interconnect electrically connected to a signal line. The die is mounted on the package substrate and includes a die-side coaxial interconnect coupled to the substrate-side coaxial interconnect. The coaxial interconnects can be joined by a solder bond between respective central conductors and shield conductors.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device, and a method of manufacturing thereof, that comprises a substrate including a dielectric layer, at least one conductive trace and conductive bump pad formed on one surface of the dielectric layer, and a protection layer covering the at least one conductive trace and conductive bump pad, the at least one conductive bump pad having one end exposed through the protection layer, and a semiconductor die electrically connected to the conductive bump pad of the substrate.

A method is disclosed for electrically bonding a first semiconductor component to a second semiconductor component, both components including arrays of contact areas. In one aspect, prior to bonding, layers of an intermetallic compound are formed on the contact areas of the second component. The roughness of the intermetallic layers is such that the intermetallic layers include cavities suitable for insertion of a solder material in the cavities, under the application of a bonding pressure, when the solder is at a temperature below its melting temperature. The components are aligned and bonded, while the solder material is applied between the two. Bonding takes place at a temperature below the melting temperature of the solder. The bond can be established only by the insertion of the solder into the cavities of the intermetallic layers, and without the formation of a second intermetallic layer.

A chip includes a semiconductor substrate, integrated circuits with at least portions in the semiconductor substrate, and a surface dielectric layer over the integrated circuits. A plurality of metal pads is distributed substantially uniformly throughout substantially an entirety of a surface of the chip. The plurality of metal pads has top surfaces level with a top surface of the surface dielectric layer. The plurality of metal pads includes active metal pads and dummy metal pads. The active metal pads are electrically coupled to the integrated circuits. The dummy metal pads are electrically decoupled from the integrated circuits.

A method is disclosed for electrically bonding a first semiconductor component to a second semiconductor component, both components including arrays of contact areas. In one aspect, prior to bonding, layers of an intermetallic compound are formed on the contact areas of the second component. The roughness of the intermetallic layers is such that the intermetallic layers include cavities suitable for insertion of a solder material in the cavities, under the application of a bonding pressure, when the solder is at a temperature below its melting temperature. The components are aligned and bonded, while the solder material is applied between the two. Bonding takes place at a temperature below the melting temperature of the solder. The bond can be established only by the insertion of the solder into the cavities of the intermetallic layers, and without the formation of a second intermetallic layer.

A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.

The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a first semiconductor layer, a second semiconductor layer, and a first, a second and a third bonding conductors. The first semiconductor layer includes a first top surface. The second semiconductor layer is disposed over the first semiconductor layer, and the second semiconductor layer includes a second top surface. The first bonding conductor is disposed over the first top surface. The second bonding conductor is disposed over the second top surface. The third bonding conductor is in contact with the first bonding conductor and the second bonding conductor, the first bonding conductor is different from the second bonding conductor, and the third bonding conductor includes a silicide material formed from the first bonding conductor and the second bonding conductor.

Semiconductor packages having a first layer interconnect portion that includes a coaxial interconnect between a die and a package substrate are described. In an example, the package substrate includes a substrate-side coaxial interconnect electrically connected to a signal line. The die is mounted on the package substrate and includes a die-side coaxial interconnect coupled to the substrate-side coaxial interconnect. The coaxial interconnects can be joined by a solder bond between respective central conductors and shield conductors.