A semiconductor device has a plurality of interconnected modular units to form a 3D semiconductor package. Each modular unit is implemented as a vertical component or a horizontal component. The modular units are interconnected through a vertical conduction path and lateral conduction path within the vertical component or horizontal component. The vertical component and horizontal component each have an interconnect interposer or semiconductor die. A first conductive via is formed vertically through the interconnect interposer. A second conductive via is formed laterally through the interconnect interposer. The interconnect interposer can be programmable. A plurality of protrusions and recesses are formed on the vertical component or horizontal component, and a plurality of recesses on the vertical component or horizontal component. The protrusions are inserted into the recesses to interlock the vertical component and horizontal component. The 3D semiconductor package can be formed with multiple tiers of vertical components and horizontal components.

Some embodiments include a method in which a first semiconductor wafer and a second semiconductor wafer are bonded with each other. The first semiconductor wafer includes a memory cell array, and the second semiconductor wafer includes a circuit to access the memory cell array. After the bonding, contacts are formed to be associated with the first semiconductor wafer. The contacts are for electrical connections between the first and second semiconductor wafers. The contacts are linked with reference positions, with each of the contacts being linked with an associated one of the reference positions. Each of the contacts is shifted from its associated one of the reference positions to absorb a bonding alignment error between the first and second semiconductor wafers.

Some embodiments include a method in which a first semiconductor wafer and a second semiconductor wafer are bonded with each other. The first semiconductor wafer includes a memory cell array, and the second semiconductor wafer includes a circuit to access the memory cell array. After the bonding, contacts are formed to be associated with the first semiconductor wafer. The contacts are for electrical connections between the first and second semiconductor wafers. The contacts are linked with reference positions, with each of the contacts being linked with an associated one of the reference positions. Each of the contacts is shifted from its associated one of the reference positions to absorb a bonding alignment error between the first and second semiconductor wafers.

A semiconductor device has a plurality of interconnected modular units to form a 3D semiconductor package. Each modular unit is implemented as a vertical component or a horizontal component. The modular units are interconnected through a vertical conduction path and lateral conduction path within the vertical component or horizontal component. The vertical component and horizontal component each have an interconnect interposer or semiconductor die. A first conductive via is formed vertically through the interconnect interposer. A second conductive via is formed laterally through the interconnect interposer. The interconnect interposer can be programmable. A plurality of protrusions and recesses are formed on the vertical component or horizontal component, and a plurality of recesses on the vertical component or horizontal component. The protrusions are inserted into the recesses to interlock the vertical component and horizontal component. The 3D semiconductor package can be formed with multiple tiers of vertical components and horizontal components.