Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a plating material to hold a die, attaching the die in the cavity, forming a dielectric material adjacent the die, forming vias in the dielectric material adjacent the die, forming PoP lands in the vias, forming interconnects in the vias, and then removing the plating material to expose the PoP lands and die, wherein the die is disposed above the PoP lands.

According to one embodiment, a semiconductor device includes a first chip, and a second chip bonded to the first chip. The first chip includes: a substrate; a transistor provided on the substrate; a plurality of first wirings provided above the transistor; and a plurality of first pads provided above the first wirings. The second chip includes: a plurality of second pads coupled to the plurality of first pads, respectively; a plurality of second wirings provided above the second pads; and a memory cell array provided above the second wirings. The first wiring, the first pad, the second pad, and the second wiring are coupled to one another in series to form a first pattern.

A semiconductor device includes a redistribution structure, an integrated circuit package attached to a first side of the redistribution structure and a core substrate coupled to a second side of the redistribution structure with a first conductive connector and a second conductive connector. The second side is opposite the first side. The semiconductor device further includes a top layer of the core substrate including a dielectric material and a chip disposed between the redistribution structure and the core substrate. The chip is interposed between sidewalls of the dielectric material.

According to one embodiment, a semiconductor device includes a first chip, and a second chip bonded to the first chip. The first chip includes: a substrate; a transistor provided on the substrate; a plurality of first wirings provided above the transistor; and a plurality of first pads provided above the first wirings. The second chip includes: a plurality of second pads coupled to the plurality of first pads, respectively; a plurality of second wirings provided above the second pads; and a memory cell array provided above the second wirings. The first wiring, the first pad, the second pad, and the second wiring are coupled to one another in series to form a first pattern.

A semiconductor device includes a redistribution structure, an integrated circuit package attached to a first side of the redistribution structure and a core substrate coupled to a second side of the redistribution structure with a first conductive connector and a second conductive connector. The second side is opposite the first side. The semiconductor device further includes a top layer of the core substrate including a dielectric material and a chip disposed between the redistribution structure and the core substrate. The chip is interposed between sidewalls of the dielectric material.

A semiconductor device includes: a plurality of first electrode films stacked in a state of being insulated from each other; a plurality of semiconductor members extending in a stacked direction of the plurality of first electrode films in a stacked body of the plurality of first electrode films; a plurality of charge storage members provided between the plurality of first electrode films and the plurality of semiconductor members; a first conductive film having a first surface, and commonly connected to the plurality of semiconductor members on the first surface; a first insulating film provided on a second surface of the first conductive film on the side opposite to the first surface; a contact provided in the first insulating film and connected to the first conductive film; and a second conductive film provided on the first insulating film and connected to the contact.

A semiconductor device includes a redistribution structure, an integrated circuit package attached to a first side of the redistribution structure and a core substrate coupled to a second side of the redistribution structure with a first conductive connector and a second conductive connector. The second side is opposite the first side. The semiconductor device further includes a top layer of the core substrate including a dielectric material and a chip disposed between the redistribution structure and the core substrate. The chip is interposed between sidewalls of the dielectric material.

Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a plating material to hold a die, attaching the die in the cavity, forming a dielectric material adjacent the die, forming vias in the dielectric material adjacent the die, forming PoP lands in the vias, forming interconnects in the vias, and then removing the plating material to expose the PoP lands and die, wherein the die is disposed above the PoP lands.

Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a plating material to hold a die, attaching the die in the cavity, forming a dielectric material adjacent the die, forming vias in the dielectric material adjacent the die, forming PoP lands in the vias, forming interconnects in the vias, and then removing the plating material to expose the PoP lands and die, wherein the die is disposed above the PoP lands.

Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a plating material to hold a die, attaching the die in the cavity, forming a dielectric material adjacent the die, forming vias in the dielectric material adjacent the die, forming PoP lands in the vias, forming interconnects in the vias, and then removing the plating material to expose the PoP lands and die, wherein the die is disposed above the PoP lands.