A pixel includes an emission area and a non-emission area; first to fourth alignment electrodes spaced apart from each other in the emission area and an area of the non-emission area; an insulating layer disposed on the first to fourth alignment electrodes; first to fourth bridge patterns disposed on the insulating layer in the non-emission area; a bank disposed on the first to fourth bridge patterns in the non-emission area, and including a first opening and a second opening; first and second pixel electrodes disposed in the emission area; and light emitting elements disposed in the emission area, and electrically connected with the first and second pixel electrodes. The first alignment electrode, the first bridge pattern, and the first pixel electrode are electrically connected to each other. The third alignment electrode, the third bridge pattern, and the second pixel electrode are electrically connected to each other.

According to some embodiments of the present disclosure, a display device includes a substrate, a first electrode and a second electrode on the substrate, and spaced apart from each other, a light emitting element between the first electrode and the second electrode, a first bank pattern and a second bank pattern protruding in a display direction of the display device, a first contact electrode and a second contact electrode electrically connecting the light emitting element to the first electrode and the second electrode, respectively, the first contact electrode including a first contact light-transmitting layer, and a first reflective electrode including a first reflective layer, and a first light-transmitting layer including a same material as the first contact light-transmitting layer, at least a portion of the first reflective electrode being on the first bank pattern.

A multichip module comprises a carrier, a plurality of chips, an electrical insulating layer, and an electrical interconnect structure. The carrier includes a bottom wall and four side walls defining an internal cavity. The chips are positioned in the internal cavity, with each chip including a plurality of bond pads. The electrical insulating layer is formed from electrically insulating material and is positioned on an upper surface of the carrier and the chips. The electrical interconnect structure includes a plurality of interconnect traces, with each interconnect trace formed from electrically conductive material and electrically connected to a first bond pad on a first chip and a second bond pad on a second chip. Each interconnect trace includes a bridge having a segment that is spaced apart from, and positioned above, the electrical insulating layer.

A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

The present technology relates to a semiconductor device and a method of manufacturing the same capable of improving reliability of a glass substrate on which a wiring layer is formed. A semiconductor device is provided with a glass substrate on a front surface or front and back surfaces of which a wiring layer including one or more layers of wiring is formed, an electronic component arranged inside a glass opening formed on the glass substrate, and a redistribution layer that connects the wiring of the glass substrate and the electronic component. The present technology is applicable to, for example, a high-frequency front-end module and the like.

A semiconductor die package includes a semiconductor transistor die having a contact pad on an upper main face. The semiconductor die package also includes an electrical conductor disposed on the contact pad and fabricated by laser-assisted structuring of a metallic material, and an encapsulant covering the semiconductor die and at least a portion of the electrical conductor.

The invention provides a chip stacking structure, including: a first chip, a second chip stacked with the first chip, a first redistribution layer, a second redistribution layer, a third redistribution layer, a first conductive channel, and a second conductive channel;; the first redistribution layer is disposed on a surface of the first chip facing the second chip; the second redistribution layer is disposed on a passive surface of the second chip, and the third redistribution layer is disposed on an active surface of the second chip; the first conductive channel passes through the second chip and the third redistribution layer, connecting the first redistribution layer and the second redistribution layer; and the second conductive channel passes through the second chip, connecting the second redistribution layer and the third redistribution layer.

A multichip module comprises a carrier, a plurality of chips, an electrical insulating layer, and an electrical interconnect structure. The carrier includes a bottom wall and four side walls defining an internal cavity. The chips are positioned in the internal cavity, with each chip including a plurality of bond pads. The electrical insulating layer is formed from electrically insulating material and is positioned on an upper surface of the carrier and the chips. The electrical interconnect structure includes a plurality of interconnect traces, with each interconnect trace formed from electrically conductive material and electrically connected to a first bond pad on a first chip and a second bond pad on a second chip. Each interconnect trace includes a bridge having a segment that is spaced apart from, and positioned above, the electrical insulating layer.

A display device may include: a substrate including a display area and a non-display area; and at least one pixel disposed in the display area, and including at least one pixel having an emission area formed to emit light. The at least one pixel may include: a plurality of first electrodes disposed on the substrate and arranged in a column direction; second electrodes spaced apart from the first electrodes; a first connection line extending in the column direction, and connecting each of the first electrodes to the first electrodes adjacent thereto; a light emitting element electrically connected to at least one of the first electrodes and at least one of the second electrodes; and an insulating pattern overlapping the first connection line.

Provided is a manufacturing process for electronic circuit components such as bare dies, and packaged integrated chips, among other configurations, to form electronic assemblies. The surface of the electronic circuit component carries electronic elements such as conductive traces and/or other configurations including contact pads. A method for forming an electronic assembly includes providing a tacky layer. Then an electronic circuit component is provided having a first side and a second side, where the first side carries the electronic elements. The first side of the electronic circuit component is positioned into contact with the tacky layer. A bonding material is then deposited to a portion of the adhesive layer that is not covered by the first side of the electronic circuit component, to a depth which is sufficient to cover at least a portion of the electronic circuit component. The bonding material is then fixed or cured into a fixed or cured bonding material, and the tacky layer is removed. By these operations, the electronic circuit component is held in a secure attachment by the fixed or cured bonding material, and circuit connections may be made.