Patent classifications
H01L2224/83001
Semiconductor package
A semiconductor package includes a package substrate including an insulating layer having an upper surface and a lower surface and provided with a first region which is recessed to a first depth from the upper surface toward the lower surface, a redistribution wiring buried in the insulating layer, a chip connection pad on a bottom surface of the recessed first region and connected to the redistribution wiring, and a wire connection pad on the upper surface of the insulating layer and connected to the redistribution wiring, a first semiconductor chip overlapping, in a top-down view of the semiconductor package, the recessed first region of the insulating layer and comprising a first chip pad connected to the chip connection pad of the package substrate, and a second semiconductor chip on the first semiconductor chip and connected to the wire connection pad of the package substrate through a conductive wire.
APPARATUS AND METHODS FOR MICRO-TRANSFER-PRINTING
In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.
Semiconductor package and method of manufacturing the same
A semiconductor package includes a semiconductor chip; a redistribution insulating layer including a first opening; an external connection bump including a first part in the first opening; a lower bump pad including a first surface in physical contact with the first part of the external connection bump and a second surface opposite to the first surface, wherein the first surface and the redistribution insulating layer partially overlap; and a redistribution pattern that electrically connects the lower bump pad to the semiconductor chip.
UNDERFILL CUSHION FILMS FOR PACKAGING SUBSTRATES AND METHODS OF FORMING THE SAME
A semiconductor structure includes a fan-out package, a packaging substrate, an solder material portions bonded to the fan-out package and the packaging substrate, an underfill material portion laterally surrounding the solder material portions, and at least one cushioning film located on the packaging substrate and contacting the underfill material portion and having a Young's modulus is lower than a Young's modulus of the underfill material portion.
LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY MODULE USING THE SAME
A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.
SEMICONDUCTOR PACKAGE DEVICE
A semiconductor package device includes a first semiconductor package, a second semiconductor package, and first connection terminals between the first and second semiconductor packages. The first semiconductor package includes a lower redistribution substrate, a semiconductor chip, and an upper redistribution substrate vertically spaced apart from the lower redistribution substrate across the semiconductor chip. The upper redistribution substrate includes a dielectric layer, redistribution patterns vertically stacked in the dielectric layer and each including line and via parts, and bonding pads on uppermost redistribution patterns. The bonding pads are exposed from the dielectric layer and in contact with the first connection terminals. A diameter of each bonding pad decreases in a first direction from a central portion at a top surface of the upper redistribution substrate to an outer portion at the top surface thereof. A thickness of each bonding pad increases in the first direction.
Multi-bump connection to interconnect structure and manufacturing method thereof
A method includes forming a package component comprising forming a dielectric layer, patterning the dielectric layer to form an opening, and forming a redistribution line including a via in the opening, a conductive pad, and a bent trace. The via is vertically offset from the conductive pad. The conductive pad and the bent trace are over the dielectric layer. The bent trace connects the conductive pad to the via, and the bent trace includes a plurality of sections with lengthwise directions un-parallel to each other. A conductive bump is formed on the conductive pad.
SEMICONDUCTOR PACKAGE INCLUDING REDISTRIBUTION SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
A semiconductor package includes a semiconductor chip; and a redistribution substrate connected to the semiconductor chip, the redistribution structure including a conductive structure including a lower conductive pattern and a redistribution structure on the lower conductive pattern and electrically connected to the lower conductive pattern, an insulating structure covering at least a side surface of the lower conductive pattern or a side surface of the redistribution structure, and a protective layer between the insulating structure and at least one of the lower conductive pattern or the redistribution structure. The protective layer including a first protective layer in contact with at least one of a side surface of the lower conductive pattern or a side surface of the redistribution structure, and a second protective layer in contact with at least a portion of a side surface of the first protective layer.
Light emitting device having cantilever electrode, LED display panel and LED display apparatus having the same
A light emitting device including at least one LED stack, electrode pads disposed on the LED stack, and cantilever electrodes disposed on the electrode pads, respectively, in which each of the cantilever electrodes has a fixed edge that is fixed to one of the electrode pads and a free standing edge that is spaced apart from the one of the electrode pads.
Method of using optoelectronic semiconductor stamp to manufacture optoelectronic semiconductor device
A method of using an optoelectronic semiconductor stamp to manufacture an optoelectronic semiconductor device comprises the following steps: a preparation step: preparing at least one optoelectronic semiconductor stamp group and a target substrate, wherein each optoelectronic semiconductor stamp group comprises at least one optoelectronic semiconductor stamp, each optoelectronic semiconductor stamp comprises a plurality of optoelectronic semiconductor components disposed on a heat conductive substrate, each optoelectronic semiconductor component has at least one electrode, and the target substrate has a plurality of conductive portions; an align-press step: aligning and attaching at least one optoelectronic semiconductor stamp to the target substrate, so that the electrodes are pressed on the corresponding conductive portions; and a bonding step: electrically connecting the electrodes to the corresponding conductive portions.