A semiconductor assembly includes a first die and a second die. The semiconductor assembly also includes a film on die (FOD) layer configured to attach the first die to the second die. The FOD layer is disposed on a first surface of the first die. The FOD layer includes a first portion comprising a first die attach film (DAF) disposed on an inner region of the first surface. The FOD layer also includes a second portion that includes a second DAF disposed on a peripheral region of the first surface surrounding the inner region. The second DAF includes a different material than the first DAF.

A semiconductor device includes a substrate and a semiconductor die including an active surface with bond pads, an opposite inactive surface, and stepped side surfaces extending between the active surface and the inactive surface. The stepped side surfaces include a first planar surface extending from the inactive surface towards the active surface, a second planar surface extending from the active surface towards the inactive surface, and a side surface offset between the first planar surface and the second planar surface. The semiconductor device further includes an adhesive layer covering at least a portion of a surface area of the second surface and attaching the semiconductor die to the substrate.

The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a substrate, an electronic element, an underfill layer, and a protective structure. The electronic element is disposed on the substrate. At least a portion of the underfill layer is disposed between the substrate and the electronic element. A thickness of the underfill layer is not greater than a height from a surface of the substrate to an upper surface of the electronic element. The protective structure is disposed on the substrate and adjacent to the underfill layer. The electronic device and the manufacturing method thereof of the disclosure may effectively control an area of the underfill layer.

A semiconductor assembly includes a first die and a second die. The semiconductor assembly also includes a film on die (FOD) layer configured to attach the first die to the second die. The FOD layer is disposed on a first surface of the first die. The FOD layer includes a first portion comprising a first die attach film (DAF) disposed on an inner region of the first surface. The FOD layer also includes a second portion that includes a second DAF disposed on a peripheral region of the first surface surrounding the inner region. The second DAF includes a different material than the first DAF.

The present invention provides a test pad structure of chip, which comprises a plurality of first internal test pads, a plurality of second internal test pads, a plurality of first extended test pads, and a plurality of second extended test pads. The first internal test pads and the second internal test pads are disposed in a chip. The second internal test pads and the first internal test pads are spaced by a distance. The first extended test pads are connected with the first internal test pads. The second extended test pads are connected with the second internal test pads. The first extended test pads and the second extended test pads may increase the contact area to be contacted by probes. Signals or power are transmitted to the first internal test pads and the second internal test pads via the first extended test pads and the second extended test pads for the probes to test the chip.

A semiconductor device includes a semiconductor element, a conductive member, and solder portions. The semiconductor element includes first main electrodes and a protective film on a first main surface, and a second main electrode on a second main surface. The protective film has an interposed film portion between the first main electrodes. The conductive member has facing portions each facing a corresponding one of the first main electrodes and an interposed conductive portion disposed between the facing portions. The solder portions are disposed between the first main electrodes and the facing portions and separated away from each other by the interposed film portion and the interposed conductive portion to define a space between the solder portions. The interposed film portion and the interposed conductive portion are less likely wetted to the solder portions to avoid the solder portions in liquid phase entering into the space during soldering.

A display device includes a substrate including a plurality of pixels, a plurality of protrusions on the substrate, an adhesive layer on the substrate, and a plurality of semiconductor light emitting devices on the adhesive layer. The semiconductor light emitting devices can be disposed in a pixel among the plurality of pixels, and the plurality of protrusions can be disposed around the plurality of semiconductor light emitting devices in the pixel.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A semiconductor package includes a first semiconductor chip on a base chip, a second semiconductor chip on the first semiconductor chip in a first direction, each of the first and second semiconductor chips including a TSV and being electrically connected to each other via the TSV, dam structures on the base chip and surrounding a periphery of the first semiconductor chip, a first adhesive film between the base chip and the first semiconductor chip, a portion of the first adhesive film filling a space between the first semiconductor chip and the dam structures, a second adhesive film between the first semiconductor chip and the second semiconductor chip, a portion of the second adhesive film overlapping the dam structures in the first direction, and an encapsulant encapsulating a portion of each of the dam structures, the first semiconductor chip, and the second semiconductor chip.

An electronic device includes a first part, and a circuit plate including a circuit substrate, a plating film made of a plating material and being disposed on a front surface of the substrate. The plating film includes a first part region on which the first part is disposed via a first solder, and a liquid-repellent region extending along a periphery side of the first part region in a surface layer of the plating film, and having a liquid repellency greater than a liquid repellency of the plating film. The liquid-repellent region includes a resist region. The plating film includes a remaining portion between the liquid-repellent region and the front surface of the circuit substrate in a thickness direction of the plating film orthogonal to the front surface. The remaining portion is made of the plating material and is free of the oxidized plating material.