An arrangement is disclosed. In one example, the arrangement of a conductor and an aluminum layer soldered together comprises a substrate and the aluminum layer disposed over the substrate. The aluminum forms a first bond metal. An intermetallic compound layer is disposed over the aluminum layer. A solder layer is disposed over the intermetallic compound layer, wherein the solder comprises a low melting majority component. The conductor is disposed over the solder layer, wherein the conductor has a soldering surface which comprises a second bond metal. The intermetallic compound comprises aluminum and the second bond metal and is predominantly free of the low melting majority component.

Anodic bonding method are disclosed. In one embodiment, an anodic bonding method may include: (1) providing a first substrate (100) having a semiconductor material; (2) providing a second substrate (200) having a bondable passivation material and contact vias (210); (3) contacting the first substrate and the second substrate (100, 200); (4) providing a resistance layer (300, 220) on the second substrate (200); and (5) applying a potential between the resistance layer and the first substrate.

A semiconductor device comprising a first substrate (100) including silicon may include a bondable passivation (200) made of a bondable material, especially a glass material; at least one contact via (210) extending through the passivation and contacting a region of the first substrate (100); an interface (204) created by anodic bonding between the substrate including silicon and the bondable passivation (200), wherein silicon-oxygen-silicon bonds are formed in the interface in order to provide adhesion between the passivation (200) and the substrate (100)

Concepts as well as arrangements are suggested, according to which a bond is enabled by anodic bonding between a glass substrate (200) having contact vias (210) and a substrate (100) including a semiconductor. For this purpose, a cover of the contact vias (210) is provided during the anodic bonding method such that process conditions are created that achieve a reliable and robust bonding of the substrates. A high resistance can be provided in the region of the contact vias (210). The arrangement for contacting the semiconductor device to the silicon substrate (100) having at least one contact via (210) extending through the passivation in order to contact a region of the first substrate (100).

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

Provided are a passivation layer for forming a semiconductor bonding structure, a sputtering target making the same, a semiconductor bonding structure and a semiconductor bonding process. The passivation layer is formed on a bonding substrate by sputtering the sputtering target; the passivation layer and the sputtering target comprise a first metal, a second metal or a combination thereof. The bonding substrate comprises a third metal. Based on a total atom number of the surface of the passivation layer, O content of the surface of the passivation layer is less than 30 at %; the third metal content of the surface of the passivation layer is less than or equal to 10 at %. The passivation layer has a polycrystalline structure. The semiconductor bonding structure sequentially comprises a first bonding substrate, a bonding layer and a second bonding substrate: the bonding layer is mainly formed by the passivation layer and the third metal.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

A semiconductor structure comprising a first semiconductor structure; a second semiconductor structure; and a silicon-nitride layer configured to bond the first semiconductor structure and second semiconductor structure together. The first semiconductor structure comprises a first wafer; a first dielectric layer; a first interconnect structure; and a first oxide layer. The second semiconductor structure comprises a second wafer; a second dielectric layer; a second interconnect structure; and a second oxide layer. The structure further comprises a first nitride layer residing on a top surface of the first oxide layer formed by a nitridation process of the top surface of the first oxide layer; and a second nitride layer residing on a top surface of the second oxide layer formed by the nitridation process of the top surface of the second oxide layer. Further, the silicon-nitride layer comprises the first nitride layer and the second nitride layer.

The present invention relates to a ceramic substrate for a power module, a method for manufacturing same, and a power module having same, the power module electrically connecting, by means of a conductive spacer, an electrode of a semiconductor device and a metal layer pattern of a ceramic substrate without a wire, thereby converting rated voltage and current while removing electrical risk factors, which may be generated during wire bonding, and increasing reliability and efficiency when used with high power.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.