Patent classifications
H01L2224/83085
Die Transfer Method and Die Transfer System Thereof
A die transfer method and a die transfer system thereof are disclosed. The die transfer method includes the following steps: providing a wafer to generate a plurality of dies; transferring a plurality of dies to a surface of a substrate to fix the plurality of dies on the surface of the substrate; aligning the substrate with a target substrate, wherein the target substrate has a landing site and the position of at least one die corresponds to the position of the landing site; in an air environment or a liquid environment, executing lyophilic or lyophobic treatment as compared to the periphery respectively to a bonding surface between the at least one die and the landing site of the target substrate; transferring the at least one die onto the landing site of the target substrate; and fixing the at least one die at the landing site.
System and method for the fluidic assembly of micro-LEDs utilizing negative pressure
An emissive panel and associated assembly method are provided. The method provides an emissive substrate having an insulating layer with a top surface and a back surface, and a dielectric layer overlying the insulating layer patterned to form a plurality of wells. Each well has a bottom surface formed on the insulating layer top surface with a first electrical interface electrically connected to a first conductive pressure channel (CPC). The CPCs are each made up of a pressure via with sidewalls formed between the well bottom surface and the insulating layer back surface. A metal layer coats the sidewalls, and a medium flow passage formed interior to the metal layer. The method uses negative pressure through the CPCs to help capture emissive elements in a liquid flow deposition process.
Light emitting element and display device including the same and method for manufacturing display device
Provided is a light emitting element according to embodiments which includes a body including a semiconductor layer and an active layer, and a ligand including a head portion bonded to a surface of the body, an end portion spaced apart from the body, and having a positive or a negative charge, and a chain portion connecting the head portion and the end portion.
METHOD AND SYSTEM FOR MASS ARRANGEMENT OF MICRO-COMPONENT DEVICES
A method for mass arrangement of micro-component devices includes the following process stages: disposing the micro-component devices to float on a liquid suspending medium, wherein the micro-component devices are spaced apart from each other with a larger initial gap along a first direction and along a second direction; using electromagnetic force to actuate the floating micro-component devices to move closer so that the micro-component devices become spaced apart from each other with a smaller specified target gap along the first and the second directions; and transferring the arranged micro-component devices with the target gap on a carrier substrate. A system for arranging the micro-component devices is also disclosed to implement the method. Therefore, a precisely arranged array of the micro-component devices can be formed on a target application substrate.
Guide apparatus for transferring light-emitting devices onto a substrate and method applying the same
A guide apparatus configured to transfer light-emitting devices in a liquid onto a substrate is provided. The guide apparatus includes a base configured to support the substrate; and a guide member configured to couple with the base to be seated on a mounting surface of the substrate in a state in which the substrate is supported on a surface of the base, wherein the guide member includes guide holes configured to respectively guide the light-emitting devices in the liquid to be disposed on the mounting surface of the substrate.
Methods for preparing layered semiconductor structures
Methods for preparing layered semiconductor structures are disclosed. The methods may involve pretreating an ion-implanted donor wafer by annealing the ion-implanted donor wafer to cause a portion of the ions to out-diffuse prior to wafer bonding. The donor structure may be bonded to a handle structure and cleaved without re-implanting ions into the donor structure.
SOLUTION DEPOSITED MAGNETICALLY GUIDED CHIPLET DISPLACEMENT
Magnetic regions of at least one of a chiplet or a receiving substrate are used to permit magnetically guided precision placement of a plurality of chiplets on the receiving substrate. In the present application, a solution containing dispersed chiplets is employed to facilitate the placement of the dispersed chiplets on bond pads that are present on a receiving substrate.
DISPLAY DEVICE
The display device can include a substrate; a barrier rib disposed on the substrate and having an assembly hole; a semiconductor light emitting device in the assembly hole; and an adhesive part between the substrate and the semiconductor light emitting device within the assembly hole. The adhesive part can include adhesive particles in contact with each other.
System and Method for the Fluidic Assembly of Micro-LEDs Utilizing Negative Pressure
An emissive panel and associated assembly method are provided. The method provides an emissive substrate having an insulating layer with a top surface and a back surface, and a dielectric layer overlying the insulating layer patterned to form a plurality of wells. Each well has a bottom surface formed on the insulating layer top surface with a first electrical interface electrically connected to a first conductive pressure channel (CPC). The CPCs are each made up of a pressure via with sidewalls formed between the well bottom surface and the insulating layer back surface. A metal layer coats the sidewalls, and a medium flow passage formed interior to the metal layer. The method uses negative pressure through the CPCs to help capture emissive elements in a liquid flow deposition process.
METHODS FOR PREPARING LAYERED SEMICONDUCTOR STRUCTURES
Methods for preparing layered semiconductor structures are disclosed. The methods may involve pretreating an ion-implanted donor wafer by annealing the ion-implanted donor wafer to cause a portion of the ions to out-diffuse prior to wafer bonding. The donor structure may be bonded to a handle structure and cleaved without re-implanting ions into the donor structure.