Patent classifications
H01L2224/83439
Sintering method using a sacrificial layer on the backside metallization of a semiconductor die
An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.
Sintering method using a sacrificial layer on the backside metallization of a semiconductor die
An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.
SEMICONDUCTOR DEVICE
A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.
Electrically conductive paste and sintered body
An object of the present invention is to provide an electrically conductive paste and a sintered body thereof having a low electric resistance value and excellent electrical conductivity when made into a sintered body. An electrically conductive paste comprising: a flake-like silver powder having a median diameter D50 of 15 μm or less; a silver powder having a median diameter D50 of 25 μm or more; and a solvent, wherein the content of the flake-like silver powder is 15 to 70 parts by mass and the content of the silver powder having a median diameter D50 of 25 μm or more is 30 to 85 parts by mass based on 100 parts by mass in total of the flake-like silver powder and the silver powder having a median diameter D50 of 25 μm or more.
Electrically conductive paste and sintered body
An object of the present invention is to provide an electrically conductive paste and a sintered body thereof having a low electric resistance value and excellent electrical conductivity when made into a sintered body. An electrically conductive paste comprising: a flake-like silver powder having a median diameter D50 of 15 μm or less; a silver powder having a median diameter D50 of 25 μm or more; and a solvent, wherein the content of the flake-like silver powder is 15 to 70 parts by mass and the content of the silver powder having a median diameter D50 of 25 μm or more is 30 to 85 parts by mass based on 100 parts by mass in total of the flake-like silver powder and the silver powder having a median diameter D50 of 25 μm or more.
BONDING SHEET AND BONDED STRUCTURE
A bonding sheet includes a copper foil and sinterable bonding films formed on both faces of the copper foil. The bonding films each contain copper particles and a solid reducing agent. The bonding sheet is used to bond to a target object to be bonded having at least one metal selected from gold, silver, copper, and nickel on a surface thereof. A bonded structure includes: a bonded object having at least one metal selected from gold, silver, copper, and nickel on a surface thereof; a copper foil; and a bonding layer including a sintered structure of copper particles; and the bonded object and the copper foil are electrically connected to each other via the bonding layer.
Method for producing structure, and structure
This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion.
Method for producing structure, and structure
This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion.
Thermosetting silicone resin composition and die attach material for optical semiconductor device
A thermosetting silicone resin composition contains the following components (A-1) to (D): (A-1) an alkenyl group-containing linear organopolysiloxane; (A-2) a branched organopolysiloxane shown by (R.sup.1.sub.3SiO.sub.1/2).sub.a(R.sup.2.sub.3SiO.sub.1/2).sub.b(SiO.sub.4/2).sub.c (1); (B-1) a branched organohydrogenpolysiloxane shown by (HR.sup.2.sub.2SiO.sub.1/2).sub.d(R.sup.2.sub.3SiO.sub.1/2).sub.e(SiO.sub.4/2).sub.f (2); (B-2) a linear organohydrogenpolysiloxane shown by (R.sup.2.sub.3SiO.sub.1/2).sub.2(HR.sup.2SiO.sub.2/2).sub.x(R.sup.2.sub.2SiO.sub.2/2).sub.y (3); (C) an adhesion aid which is an epoxy group-containing branched organopolysiloxane; and (D) a catalyst containing a combination of a zero-valent platinum complex with a divalent platinum complex and/or a tetravalent platinum complex. This provides a thermosetting silicone resin composition which causes little contamination at a gold pad portion and has excellent adhesiveness to a silver lead frame.
Thermosetting silicone resin composition and die attach material for optical semiconductor device
A thermosetting silicone resin composition contains the following components (A-1) to (D): (A-1) an alkenyl group-containing linear organopolysiloxane; (A-2) a branched organopolysiloxane shown by (R.sup.1.sub.3SiO.sub.1/2).sub.a(R.sup.2.sub.3SiO.sub.1/2).sub.b(SiO.sub.4/2).sub.c (1); (B-1) a branched organohydrogenpolysiloxane shown by (HR.sup.2.sub.2SiO.sub.1/2).sub.d(R.sup.2.sub.3SiO.sub.1/2).sub.e(SiO.sub.4/2).sub.f (2); (B-2) a linear organohydrogenpolysiloxane shown by (R.sup.2.sub.3SiO.sub.1/2).sub.2(HR.sup.2SiO.sub.2/2).sub.x(R.sup.2.sub.2SiO.sub.2/2).sub.y (3); (C) an adhesion aid which is an epoxy group-containing branched organopolysiloxane; and (D) a catalyst containing a combination of a zero-valent platinum complex with a divalent platinum complex and/or a tetravalent platinum complex. This provides a thermosetting silicone resin composition which causes little contamination at a gold pad portion and has excellent adhesiveness to a silver lead frame.