A semiconductor device package and a method for packaging the same are provided. A semiconductor device package includes a carrier, an electronic component, a buffer layer, a reinforced structure, and an encapsulant. The electronic component is disposed over the carrier and has an active area. The buffer layer is disposed on the active area of the electronic component. The reinforced structure is disposed on the buffer layer. The encapsulant encapsulates the carrier, the electronic component and the reinforced structure.

A semiconductor device package and a method for packaging the same are provided. A semiconductor device package includes a carrier, an electronic component, a buffer layer, a reinforced structure, and an encapsulant. The electronic component is disposed over the carrier and has an active area. The buffer layer is disposed on the active area of the electronic component. The reinforced structure is disposed on the buffer layer. The encapsulant encapsulates the carrier, the electronic component and the reinforced structure.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

An electronic device includes a support member and a mount member mounting on the support member. The support member and the mount member are sealed by a resin member. The support member includes a surface having a laser irradiation mark. The mount member includes a surface having a rough portion with an accumulation of material of the support member.

An electronic device includes a support member and a mount member mounting on the support member. The support member and the mount member are sealed by a resin member. The support member includes a surface having a laser irradiation mark. The mount member includes a surface having a rough portion with an accumulation of material of the support member.

A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.

A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.