An SIP module includes a plurality of electrical components mounted to an interconnect substrate. The electrical components and interconnect substrate are covered by an encapsulant. A conductive post is formed through the encapsulant. A plurality of openings is formed in the encapsulant by laser in a form of a circuit pattern. A conductive material is deposited over a surface of the encapsulant and into the openings to form an electrical circuit pattern. A portion of the conductive material is removed by a grinder to expose the electrical circuit pattern. The grinding operation planarizes the surface of the encapsulant and the electrical circuit pattern. The electrical circuit pattern can be a trace, contact pad, RDL, or other interconnect structure. The electrical circuit pattern can also be a shielding layer or antenna. An electrical component is disposed over the SIP module and electrical circuit pattern.

An SIP module includes a plurality of electrical components mounted to an interconnect substrate. The electrical components and interconnect substrate are covered by an encapsulant. A conductive post is formed through the encapsulant. A plurality of openings is formed in the encapsulant by laser in a form of a circuit pattern. A conductive material is deposited over a surface of the encapsulant and into the openings to form an electrical circuit pattern. A portion of the conductive material is removed by a grinder to expose the electrical circuit pattern. The grinding operation planarizes the surface of the encapsulant and the electrical circuit pattern. The electrical circuit pattern can be a trace, contact pad, RDL, or other interconnect structure. The electrical circuit pattern can also be a shielding layer or antenna. An electrical component is disposed over the SIP module and electrical circuit pattern.

The present application discloses a semiconductor device with a heat dissipation unit and a method for fabricating the semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer positioned on the die stack, and a carrier structure including a carrier substrate positioned on the intervening bonding layer, and through semiconductor vias positioned in the carrier substrate and on the intervening bonding layer for thermally conducting heat.

The present application discloses a semiconductor device with a heat dissipation unit and a method for fabricating the semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer positioned on the die stack, and a carrier structure including a carrier substrate positioned on the intervening bonding layer, and through semiconductor vias positioned in the carrier substrate and on the intervening bonding layer for thermally conducting heat.

A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P-N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.

A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P-N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.