A bonding structure includes a first layer of first alloy component disposed on a substrate and a first layer of a second alloy component disposed on the first alloy component. The second alloy component has a lower melting temperature than the first alloy component. A second layer of the first alloy component is disposed on the first layer of the second alloy component and a second layer of the second alloy component is disposed on the second layer of the first alloy component.

An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A semiconductor module includes a substrate, a semiconductor package disposed to the substrate, a housing to which the substrate is fixed, and a Y capacitor. A front-surface wiring in the substrate includes a front-surface ground wiring electrically connected to the housing, and a front-surface main wiring connected to a rear-surface wiring that is connected to the semiconductor package. The Y capacitor is disposed on a front surface of the substrate at a position facing the semiconductor package and between the front-surface ground wiring and the front-surface main wiring. The semiconductor package and the Y capacitor are disposed in such a manner that a direction of electric current flowing in the semiconductor package and a direction of electric current flowing in the Y capacitor are opposite to each other.

A semiconductor module includes a substrate, a semiconductor package disposed to the substrate, a housing to which the substrate is fixed, and a Y capacitor. A front-surface wiring in the substrate includes a front-surface ground wiring electrically connected to the housing, and a front-surface main wiring connected to a rear-surface wiring that is connected to the semiconductor package. The Y capacitor is disposed on a front surface of the substrate at a position facing the semiconductor package and between the front-surface ground wiring and the front-surface main wiring. The semiconductor package and the Y capacitor are disposed in such a manner that a direction of electric current flowing in the semiconductor package and a direction of electric current flowing in the Y capacitor are opposite to each other.

A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

A semiconductor device includes: a semiconductor die having a metal region; a substrate having a metal region; and a soldered joint between the metal region of the semiconductor die and the metal region of the substrate. One or more intermetallic phases are present throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the semiconductor die and the metal region of the substrate. The soldered joint has the same length-to-width aspect ratio as the semiconductor die.