Embodiments disclosed herein include multi-die modules and methods of assembling multi-die modules. In an embodiment, a multi-die module comprises a first die. In an embodiment the first die comprises a first pedestal, a plateau around the first pedestal, and a stub extending up from the plateau. In an embodiment, the multi-die module further comprises a second die. In an embodiment, the second die comprises a second pedestal, where the second pedestal is attached to the first pedestal.

The present specification provides a display device using semiconductor light-emitting diodes which are self-assembled in fluid, and a method for manufacturing same. Specifically, the semiconductor light-emitting diode comprises: a first-conductive-type electrode layer and a second-conductive-type electrode layer; a first-conductive-type semiconductor layer electrically connected to the first-conductive-type electrode layer; an active layer provided on the first-conductive-type semiconductor layer; and a second-conductive-type semiconductor layer provided on the active layer and electrically connected to the second-conductive-type electrode layer, wherein one surface of the second-conductive-type semiconductor layer comprises a mesa structure formed by etching a portion of the one surface, and the second-conductive-type electrode layer is provided on the one surface comprising the mesa structure of the second-conductive-type semiconductor layer.

Semiconductor device package assemblies and associated methods are disclosed herein. The semiconductor device package assembly includes (1) a base component having a front side and a back side, the base component having a first metallization structure at the front side; (2) a semiconductor device package having a first side, a second side with a recess, and a second metallization structure at the first side and a contacting region exposed in the recess at the second side; (3) an interconnect structure at least partially positioned in the recess at the second side of the semiconductor device package; and (4) a thermoset material or structure between the front side of the base component and the second side of the semiconductor device package. The interconnect structure is in the thermoset material and includes discrete conductive particles electrically coupled to one another.

Semiconductor device package assemblies and associated methods are disclosed herein. The semiconductor device package assembly includes (1) a base component having a front side and a back side, the base component having a first metallization structure at the front side; (2) a semiconductor device package having a first side, a second side with a recess, and a second metallization structure at the first side and a contacting region exposed in the recess at the second side; (3) an interconnect structure at least partially positioned in the recess at the second side of the semiconductor device package; and (4) a thermoset material or structure between the front side of the base component and the second side of the semiconductor device package. The interconnect structure is in the thermoset material and includes discrete conductive particles electrically coupled to one another.

Semiconductor device package assemblies and associated methods are disclosed herein. The semiconductor device package assembly includes (1) a base component having a front side and a back side, the base component having a first metallization structure at the front side; (2) a semiconductor device package having a first side, a second side with a recess, and a second metallization structure at the first side and a contacting region exposed in the recess at the second side; (3) an interconnect structure at least partially positioned in the recess at the second side of the semiconductor device package; and (4) a thermoset material or structure between the front side of the base component and the second side of the semiconductor device package. The interconnect structure is in the thermoset material and includes discrete conductive particles electrically coupled to one another.

A semiconductor device includes a metal column that extends in a stretching direction; a polymer layer that surrounds the metal column from a direction crossing the stretching direction; and a guide that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture containing metal particles and polymers in a guide; and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column that stretches in a stretching direction of the guide from the metal particles.

A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.

To miniaturize metal columns. A semiconductor device includes a metal column (14) that extends in a stretching direction; a polymer layer (16) that surrounds the metal column from a direction crossing the stretching direction; and a guide (12) that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture (20) containing metal particles (22) and polymers (24) in a guide (12); and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer (16) that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column (14) that stretches in a stretching direction of the guide from the metal particles.

Semiconductor device package assemblies and associated methods are disclosed herein. The semiconductor device package assembly includes (1) a base component having a front side and a back side, the base component having a first metallization structure at the front side; (2) a semiconductor device package having a first side, a second side with a recess, and a second metallization structure at the first side and a contacting region exposed in the recess at the second side; (3) an interconnect structure at least partially positioned in the recess at the second side of the semiconductor device package; and (4) a thermoset material or structure between the front side of the base component and the second side of the semiconductor device package. The interconnect structure is in the thermoset material and includes discrete conductive particles electrically coupled to one another.

The present disclosure relates to a semiconductor device package comprising a substrate, a semiconductor device, and a underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.