A method for producing a semiconductor device includes dicing, at a scribe area of a semiconductor wafer, the semiconductor wafer into semiconductor chips including respective circuit areas formed on the semiconductor wafer, the scribe area being provided between the circuit areas and extending in a first direction in a plan view, wherein the scribe area includes a first area extending in the first direction and second areas including monitor pads and extending in the first direction and located on both sides of the first area, wherein the method includes removing at least portions of the monitor pads by emitting laser beam to the second areas before the dicing, and wherein, in the dicing, the semiconductor wafer is diced at the first area.

A method for producing a semiconductor device includes dicing, at a scribe area of a semiconductor wafer, the semiconductor wafer into semiconductor chips including respective circuit areas formed on the semiconductor wafer, the scribe area being provided between the circuit areas and extending in a first direction in a plan view, wherein the scribe area includes a first area extending in the first direction and second areas including monitor pads and extending in the first direction and located on both sides of the first area, wherein the method includes removing at least portions of the monitor pads by emitting laser beam to the second areas before the dicing, and wherein, in the dicing, the semiconductor wafer is diced at the first area.

In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.

This disclosure is related to integrating optoelectronics microdevices into a system substrate for efficient and durable electrical bonding between two substrates at low temperature. 2D nanostructures and 3D scaffolds may create interlocking structures for improved bonding properties. Addition of nanoparticles into the structure creates high surface area for better conduction. Application of curing agents before or after alignment of micro devices and receiving substrates further assists with formation of strong bonds.

A method for producing a semiconductor device includes dicing, at a scribe area of a semiconductor wafer, the semiconductor wafer into semiconductor chips including respective circuit areas formed on the semiconductor wafer, the scribe area being provided between the circuit areas and extending in a first direction in a plan view, wherein the scribe area includes a first area extending in the first direction and second areas including monitor pads and extending in the first direction and located on both sides of the first area, wherein the method includes removing at least portions of the monitor pads by emitting laser beam to the second areas before the dicing, and wherein, in the dicing, the semiconductor wafer is diced at the first area.

In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.

A component structure comprises a substrate and a sacrificial layer comprising a sacrificial material disposed on or in the substrate. The sacrificial layer defines sacrificial portions laterally spaced apart by anchors. A component is disposed entirely over each sacrificial portion and connected to at least one anchor by a tether. A spacer comprising a spacer material is disposed in or on the sacrificial portion at least partially between the tether and the substrate. For at least one etchant, the spacer material etches faster than the sacrificial material when exposed to the etchant.

In an embodiment, a device includes: an integrated circuit die; a redistribution structure over a front-side surface of the integrated circuit die; a socket over the redistribution structure; a mechanical brace over the socket, the mechanical brace having an opening exposing the socket, edge regions of the socket overlapping edge regions of the mechanical brace at the opening; a first standoff screw disposed in the edge regions of the mechanical brace, the first standoff screw physically contacting the socket, the first standoff screw extending a first distance between the socket and the mechanical brace; and a bolt extending through the mechanical brace and the redistribution structure.

In an embodiment, a device includes: an integrated circuit die; a redistribution structure over a front-side surface of the integrated circuit die; a socket over the redistribution structure; a mechanical brace over the socket, the mechanical brace having an opening exposing the socket, edge regions of the socket overlapping edge regions of the mechanical brace at the opening; a first standoff screw disposed in the edge regions of the mechanical brace, the first standoff screw physically contacting the socket, the first standoff screw extending a first distance between the socket and the mechanical brace; and a bolt extending through the mechanical brace and the redistribution structure.

This disclosure is related to integrating optoelectronics microdevices into a system substrate for efficient and durable electrical bonding between two substrates at low temperature. 2D nanostructures and 3D scaffolds may create interlocking structures for improved bonding properties. Addition of nanoparticles into the structure creates high surface area for better conduction. Application of curing agents before or after alignment of micro devices and receiving substrates further assists with formation of strong bonds.