An embodiment of the present invention is an IC chip mounting apparatus includes: a conveyor configured to convey an antenna continuous body on a conveying surface, the antenna continuous body having a base material and plural inlay antennas continuously formed on the base material, the antenna continuous body having an adhesive and an IC chip placed at a reference position of each of the antennas; a measurement unit configured to measure an interval between adjacent two of the antennas of the antenna continuous body; a press unit moving machine configured to sequentially feed out press units each having a pressing surface, from a waiting position, to move each of the press units along the conveying surface; and a controller configured to control timing of feeding out each of the press units from the waiting position based on the interval measured by the measurement unit, so that the pressing surface of each of the press units presses a predetermined region containing the reference position of each of the antennas on the conveying surface.

An embodiment of the present invention is an IC chip mounting apparatus includes: a conveyor configured to convey an antenna continuous body on a conveying surface, the antenna continuous body having a base material and plural inlay antennas continuously formed on the base material, the antenna continuous body having an adhesive and an IC chip placed at a reference position of each of the antennas; a measurement unit configured to measure an interval between adjacent two of the antennas of the antenna continuous body; a press unit moving machine configured to sequentially feed out press units each having a pressing surface, from a waiting position, to move each of the press units along the conveying surface; and a controller configured to control timing of feeding out each of the press units from the waiting position based on the interval measured by the measurement unit, so that the pressing surface of each of the press units presses a predetermined region containing the reference position of each of the antennas on the conveying surface.

Representative implementations of techniques and methods include chemical mechanical polishing for hybrid bonding. The disclosed methods include depositing and patterning a dielectric layer on a substrate to form openings in the dielectric layer, depositing a barrier layer over the dielectric layer and within a first portion of the openings, and depositing a conductive structure over the barrier layer and within a second portion of the openings not occupied by the barrier layer, at least a portion of the conductive structure in the second portion of the openings coupled or contacting electrical circuitry within the substrate. Additionally, the conductive structure is polished to reveal portions of the barrier layer deposited over the dielectric layer and not in the second portion of the openings. Further, the barrier layer is polished with a selective polish to reveal a bonding surface on or at the dielectric layer.

A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.

A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.

A connection structure including: a first circuit member having a plurality of first electrodes; a second circuit member having a plurality of second electrodes; and an intermediate layer having a plurality of bonding portions electrically connecting the first electrodes and the second electrodes, in which at least one of the first electrode and the second electrode that are connected by the bonding portion is a gold electrode, and 90% or more of the plurality of bonding portions include a first region containing a tin-gold alloy and connecting the first electrode and the second electrode and a second region containing bismuth and being in contact with the first region.

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160° C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40° C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50° C. than the reaction start temperature.

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160° C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40° C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50° C. than the reaction start temperature.

A method of manufacturing a light source device includes: disposing bumps containing a first metal on a first substrate which is thermally conductive; disposing a bonding member on the bumps, the bonding member containing Au—Sn alloy; disposing a light emitting element on the bumps and the bonding member; and heating the first substrate equipped with the bumps, the bonding member, and the light emitting element.

A method of manufacturing a light source device includes: disposing bumps containing a first metal on a first substrate which is thermally conductive; disposing a bonding member on the bumps, the bonding member containing Au—Sn alloy; disposing a light emitting element on the bumps and the bonding member; and heating the first substrate equipped with the bumps, the bonding member, and the light emitting element.