Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

A foil package includes a first foil substrate with a first and a second main surface, a second foil substrate with a first and a second main surface, wherein its first main surface is arranged facing the second main surface of the first foil substrate. The foil package includes at least one electronic device arranged between the first foil substrate and the second foil substrate and a first electrically conductive layer structure structured into a plurality of first partial areas arranged on the second main surface of the first foil substrate. The plurality of partial areas incompletely cover the second main surface of the first foil substrate. The at least one electronic device includes a terminal side and a side opposite to the terminal side.

Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes loading a first wafer and a second wafer onto a bonding platform such that the second wafer overlies the first wafer. An alignment process is performed to align the second wafer over the first wafer by virtue of a plurality of wafer pins, where a plurality of first parameters are associated with the wafer pins during the alignment process. The second wafer is bonded to the first wafer. An overlay (OVL) measurement process is performed on the first wafer and the second wafer by virtue of the plurality of wafer pins, where a plurality of second parameters are associated with the wafer pins during the alignment process. An OVL shift is determined between the first wafer and the second wafer based on a comparison between the first parameters associated with the wafer pins during the alignment process and the second parameters associated with the wafer pins during the OVL measurement process.

A display includes a pixel electrode disposed on a substrate, a light emitting element disposed on the pixel electrode, a connection electrode disposed on a side surface of the light emitting element, and a common electrode disposed on the light emitting element. The light emitting element includes a first sub light emitting element, a second sub light emitting element disposed on the first sub light emitting element, and a third sub light emitting element disposed on the second sub light emitting element. The connection electrode is disposed on at least one side surface of the first sub light emitting element, the second sub light emitting element, and the third sub light emitting element.

A unit pixel including a first light emitting stack; a second light emitting stack disposed under the first light emitting stack, and having an area greater than that of the first light emitting stack; a third light emitting stack disposed under the second light emitting stack, and having an area greater than that of the second light emitting stack, in which at least one of the first through third light emitting stacks includes a side surface having an inclination angle within a range of about 30 degrees to about 70 degrees with respect to a first plane parallel to a top surface of the third light emitting stack.

Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes loading a first wafer and a second wafer onto a bonding platform such that the second wafer overlies the first wafer. An alignment process is performed to align the second wafer over the first wafer by virtue of a plurality of wafer pins, where a plurality of first parameters are associated with the wafer pins during the alignment process. The second wafer is bonded to the first wafer. An overlay (OVL) measurement process is performed on the first wafer and the second wafer by virtue of the plurality of wafer pins, where a plurality of second parameters are associated with the wafer pins during the alignment process. An OVL shift is determined between the first wafer and the second wafer based on a comparison between the first parameters associated with the wafer pins during the alignment process and the second parameters associated with the wafer pins during the OVL measurement process.

Illustrative embodiments of anisotropic conductive adhesive (ACA) and associated methods are disclosed. In one illustrative embodiment, the ACA may comprise a binder curable using UV light and a plurality of particles suspended in the binder. Each of the plurality of particles may comprise a ferromagnetic material coated with a layer of electrically conductive material. The electrically conducting material may form electrically conductive and isolated parallel paths when the ACA is cured using UV light after being subjected to a magnetic field.

Illustrative embodiments of anisotropic conductive adhesive (ACA) and associated methods are disclosed. In one illustrative embodiment, the ACA may comprise a binder curable using UV light and a plurality of particles suspended in the binder. Each of the plurality of particles may comprise a ferromagnetic material coated with a layer of electrically conductive material. The electrically conducting material may form electrically conductive and isolated parallel paths when the ACA is cured using UV light after being subjected to a magnetic field.

A fan-out packaging method employing a combined process includes: manufacturing at least two layers of basic circuit patterns on a substrate; manufacturing a galvanic isolation layer on one of the two layers of basic circuit patterns; manufacturing a fine circuit pattern on the galvanic isolation layer; using a bonding layer to bond an electronic component to the galvanic isolation layer, and using a patch material to establish an electrical connection between the electronic component and the fine circuit pattern; and using a packaging layer to package the electronic component, wherein the fine circuit pattern has a width less than widths of the basic circuit patterns. In the present disclosure, multiple layers of circuits are manufactured before installation and packaging of electronic components, thereby reducing the number of times an insulation material is to be heated, and broadening the range of available types of insulation materials.

A semiconductor device is provided with: a reference unit in which at least two circuit modules are stacked with circuit layers adjoining each other; an additional unit in which at least two other circuit modules are stacked with circuit layers adjoining each other, the additional unit being stacked on the reference unit; and a via disposed through the reference unit and the additional unit and extending in a stacking direction. The via includes a reference via disposed in the reference unit, and an additional via disposed in the additional unit. The additional via at the position of contact with the reference via has a diameter smaller than a diameter of the reference via.