Patent classifications
H01L2224/83951
SEMICONDUCTOR MODULE
A semiconductor module includes a wiring substrate and two semiconductor devices mounted on the wiring substrate. The semiconductor module includes a housing having a rectangular frame body including four side walls. The housing includes a beam that bridges first side walls. A bus bar includes two end portions, upright portions each extending from one of the end portions in the thickness direction of an insulating substrate, bent portions each extending continuously with one of the upright portions, and an extension extending continuously with the bent portions. A section of the extension is embedded in the housing.
SEMICONDUCTOR MODULE AND POWER CONVERSION APPARATUS
A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.
ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a substrate, an electronic element, an underfill layer, and a protective structure. The electronic element is disposed on the substrate. At least a portion of the underfill layer is disposed between the substrate and the electronic element. A thickness of the underfill layer is not greater than a height from a surface of the substrate to an upper surface of the electronic element. The protective structure is disposed on the substrate and adjacent to the underfill layer. The electronic device and the manufacturing method thereof of the disclosure may effectively control an area of the underfill layer.
Package structure including pillars and method for manufacturing the same
A package structure includes a base material, at least one electronic device, at least one encapsulant and a plurality of dummy pillars. The electronic device is electrically connected to the base material. The encapsulant covers the electronic device. The dummy pillars are embedded in the encapsulant. At least two of the dummy pillars have different heights.
Semiconductor device and method for manufacturing semiconductor device
A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.
SEMICONDUCTOR PACKAGE
A semiconductor package is provided. The semiconductor package includes a first structure with a first insulating layer and a connection pad which penetrates through the first insulating layer; and a second structure with a second insulating layer bonded to the first insulating layer and a pad structure provided in a recess portion of the second insulating layer. The pad structure is bonded to and wider than the connection pad. The pad structure includes: an electrode pad disposed on a bottom surface of the recess portion; a solder disposed on the electrode pad and bonded to the connection pad; and a conductive support disposed to surround a side surface of the solder on the electrode pad and bonded to the first insulating layer. A melting point of the conductive support is higher than a melting point of the solder.
Electronic device and method for manufacturing the same
An electronic device includes a support member and a mount member mounting on the support member. The support member and the mount member are sealed by a resin member. The support member includes a surface having a laser irradiation mark. The mount member includes a surface having a rough portion with an accumulation of material of the support member.
BONDING OF BRIDGE TO MULTIPLE SEMICONDUCTOR CHIPS
Interconnecting a first chip and a second chip by a bridge member includes a chip handler for handling the first chip and the second chip. Each of the first chip and the second chip has a first surface including a first set of terminals and a second surface opposite to the first surface. The chip handler has an opening and at least one support surface for supporting the first surfaces of the first chip and the second chip when the first chip and the second chip are mounted to the chip handler. A chip support member supports the first chip and the second chip from the second surfaces, and a bridge handler is provided for inserting the bridge member through the opening of the chip handler and for placing the bridge member onto the first sets of terminals of the first chip and the second chip.
SIDE-FILLING RESIN COMPOSITION, SEMICONDUCTOR DEVICE, AND METHOD FOR REMOVING SIDE-FILLING MEMBER
A side-filling resin composition is used to form a side-filling member to be interposed between a base member and a peripheral edge portion of a surface, facing the base member, of a mounted component that is surface-mounted on the base member. The side-filling resin composition has photocurability.
SEMICONDUCTOR DEVICE
A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.