A method of attaching a metal clip to a semiconductor die includes: aligning a first bonding region of the metal clip with a first bond pad of the semiconductor die; and while the first bonding region of the metal clip is aligned with the first bond pad of the semiconductor die, forming a plurality of first wire bonds to the first bond pad of the semiconductor die through a plurality of openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die. Additional methods and related semiconductor packages produced from such methods are also described.

A molded semiconductor package arrangement may comprise a die pad configured to support a semiconductor; a set of leads; and a mold structure that is formed to enclose the semiconductor and the die pad within the mold structure. The set of leads and the die pad may be formed from a same piece of conductive material. An electrical contact plane of the set of leads may be offset from a bottom surface of the die pad. The mold structure may include a molded standoff that is beneath the die pad. A bottom surface of the molded standoff may extend below the electrical contact plane of the set of leads by a threshold distance that corresponds to a thickness of the molded standoff.

An electronic device package includes a first die coupled to a substrate, a second die coupled with the first die, and a spacer element coupled to the second die to form a stacked structure that includes the first die, the second die, and the spacer element. An electrically conductive shield overlies the stacked structure. The shield has a first end coupled to the spacer element and a second end coupled to the substrate. Inter-chip bond wires may electrically interconnect the first and second dies, and the shield may additionally overlie the bond wires. The spacer element may extend above a surface of the second die at a height that is sufficient to prevent the shield from touching the inter-chip bond wires.

An electronic device package includes a first die coupled to a substrate, a second die coupled with the first die, and a spacer element coupled to the second die to form a stacked structure that includes the first die, the second die, and the spacer element. An electrically conductive shield overlies the stacked structure. The shield has a first end coupled to the spacer element and a second end coupled to the substrate. Inter-chip bond wires may electrically interconnect the first and second dies, and the shield may additionally overlie the bond wires. The spacer element may extend above a surface of the second die at a height that is sufficient to prevent the shield from touching the inter-chip bond wires.

A molded semiconductor package arrangement may comprise a die pad configured to support a semiconductor; a set of leads; and a mold structure that is formed to enclose the semiconductor and the die pad within the mold structure. The set of leads and the die pad may be formed from a same piece of conductive material. An electrical contact plane of the set of leads may be offset from a bottom surface of the die pad. The mold structure may include a molded standoff that is beneath the die pad. A bottom surface of the molded standoff may extend below the electrical contact plane of the set of leads by a threshold distance that corresponds to a thickness of the molded standoff.

A semiconductor package includes: a semiconductor die attached to a leadframe and having a first bond pad at a side of the semiconductor die facing away from the leadframe; a metal clip having a first bonding region attached to the first bond pad of the semiconductor die by a plurality of first wire bonds which extend through a plurality of first openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die; and a joint between the plurality of first wire bonds and the metal clip at a side of the metal clip facing away from the semiconductor die. Additional semiconductor package embodiments and related methods of manufacture are also described.

A power module includes a substrate, a plurality of semiconductor dies coupled to the substrate, and a clip substrate member having a first surface and a second surface. The first surface is coupled to the plurality of semiconductor dies. The clip substrate member includes a first conductive clip, and a second conductive clip, and a dielectric material portion disposed between the first conductive clip and the second conductive clip. The second surface includes a first contact region and a second contact region. The first contact region includes a portion of the first conductive clip. The second contact region includes a portion of the second conductive clip.