In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

A semiconductor device in which even when cracks occur in a sealing material, the entry of moisture through the cracks can be prevented. A semiconductor device comprising a semiconductor element 11 mounted on a laminated substrate 12 and an electrically conductive connecting member, and a sealing material which seals the semiconductor element and the electrically conductive connecting member, wherein the sealing material includes a sealing layer 20 sealing members to be sealed including the laminated substrate 12, the semiconductor element 11, and the electrically conductive connecting member and including a thermosetting resin, and a protective layer 21 coating the sealing layer and including a silicone rubber, and wherein a value A.sub.1 of a tensile strength × elongation at break of the sealing layer 20 is less than a value A.sub.2 of a tensile strength × elongation at break of the protective layer 21, and the A.sub.2 is 1600 MPa or less.

A semiconductor device in which even when cracks occur in a sealing material, the entry of moisture through the cracks can be prevented. A semiconductor device comprising a semiconductor element 11 mounted on a laminated substrate 12 and an electrically conductive connecting member, and a sealing material which seals the semiconductor element and the electrically conductive connecting member, wherein the sealing material includes a sealing layer 20 sealing members to be sealed including the laminated substrate 12, the semiconductor element 11, and the electrically conductive connecting member and including a thermosetting resin, and a protective layer 21 coating the sealing layer and including a silicone rubber, and wherein a value A.sub.1 of a tensile strength × elongation at break of the sealing layer 20 is less than a value A.sub.2 of a tensile strength × elongation at break of the protective layer 21, and the A.sub.2 is 1600 MPa or less.

A semiconductor device has a leadframe and a first electrical component including a first surface disposed on the leadframe. A first clip bond is disposed over a second surface of the first electrical component. The first clip bond extends vertically through the semiconductor device. The first clip bond has a vertical member, horizontal member connected to the vertical member, die contact integrated with the horizontal member, and clip foot extending from the vertical member. A second electrical component has a first surface disposed on the first clip bond. A second clip bond is disposed over a second surface of the second electrical component opposite the first surface of the second electrical component. An encapsulant is deposited around the first electrical component and first clip bond. A second electrical component is disposed over the encapsulant. The clip foot is exposed from the encapsulant.

A semiconductor device has a leadframe and a first electrical component including a first surface disposed on the leadframe. A first clip bond is disposed over a second surface of the first electrical component. The first clip bond extends vertically through the semiconductor device. The first clip bond has a vertical member, horizontal member connected to the vertical member, die contact integrated with the horizontal member, and clip foot extending from the vertical member. A second electrical component has a first surface disposed on the first clip bond. A second clip bond is disposed over a second surface of the second electrical component opposite the first surface of the second electrical component. An encapsulant is deposited around the first electrical component and first clip bond. A second electrical component is disposed over the encapsulant. The clip foot is exposed from the encapsulant.

A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

An integrated circuit package includes a leadframe with a die pad and a lead. A semiconductor die is attached to a top surface of the die pad. A clip has a lead contact area with a surface pattern on a bottom surface of the clip that is proximate to a first end of the clip. A portion of the surface pattern is attached to a top surface of a terminal pad of the lead. The clip includes a die contact area on the bottom surface of the clip that is proximate to a second end of the clip. The die contact area of the clip is attached to a top contact on the semiconductor die. The surface pattern has a length in a longitudinal direction of the clip in a direction parallel with a plane of the bottom surface of the die pad that is greater than a length of the top surface of the terminal pad of the lead.

An integrated circuit package includes a leadframe with a die pad and a lead. A semiconductor die is attached to a top surface of the die pad. A clip has a lead contact area with a surface pattern on a bottom surface of the clip that is proximate to a first end of the clip. A portion of the surface pattern is attached to a top surface of a terminal pad of the lead. The clip includes a die contact area on the bottom surface of the clip that is proximate to a second end of the clip. The die contact area of the clip is attached to a top contact on the semiconductor die. The surface pattern has a length in a longitudinal direction of the clip in a direction parallel with a plane of the bottom surface of the die pad that is greater than a length of the top surface of the terminal pad of the lead.