Patent classifications
H01L2224/848
SEMICONDUCTOR PACKAGE WITH WIRE BOND JOINTS AND RELATED METHODS OF MANUFACTURING
A method of attaching a metal clip to a semiconductor die includes: aligning a first bonding region of the metal clip with a first bond pad of the semiconductor die; and while the first bonding region of the metal clip is aligned with the first bond pad of the semiconductor die, forming a plurality of first wire bonds to the first bond pad of the semiconductor die through a plurality of openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die. Additional methods and related semiconductor packages produced from such methods are also described.
SEMICONDUCTOR MODULE AND CONDUCTIVE MEMBER FOR SEMICONDUCTOR MODULE
A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.
SEMICONDUCTOR MODULE AND CONDUCTIVE MEMBER FOR SEMICONDUCTOR MODULE
A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.
POWER CONVERSION APPARATUS AND METHOD FOR MANUFACTURING THE SAME
A second lead frame is set onto a conductive layer and a busbar. The second lead frame has holes previously formed at opposite ends thereof, and pieces of solder material or solder pieces are inserted into the holes. Then, the solder pieces are vibrated by an ultrasonically vibrating tool, whereby the solder pieces are melted without having a high temperature. The second lead frame is thus bonded to the conductive layer and the busbar. A semiconductor element and the busbar are connected by a first lead frame and the second lead frame. The connection structure thereof is such that the second lead frame to be bonded by ultrasonic bonding or other bonding methods is not directly in contact with the semiconductor element, which eliminates the risk of damage to the semiconductor element.
POWER CONVERSION APPARATUS AND METHOD FOR MANUFACTURING THE SAME
A second lead frame is set onto a conductive layer and a busbar. The second lead frame has holes previously formed at opposite ends thereof, and pieces of solder material or solder pieces are inserted into the holes. Then, the solder pieces are vibrated by an ultrasonically vibrating tool, whereby the solder pieces are melted without having a high temperature. The second lead frame is thus bonded to the conductive layer and the busbar. A semiconductor element and the busbar are connected by a first lead frame and the second lead frame. The connection structure thereof is such that the second lead frame to be bonded by ultrasonic bonding or other bonding methods is not directly in contact with the semiconductor element, which eliminates the risk of damage to the semiconductor element.
ELECTRODE TERMINAL, SEMICONDUCTOR DEVICE, AND POWER CONVERSION APPARATUS
An electrode terminal includes a body and a first bonding part. The body includes a first metal material. Then, the first bonding part is bonded to one end of the body, and includes a second metal material which is a clad material other than the first metal material. The first bonding part is ultrasonically bondable to a first bonded member. An elastic part which is elastically deformable is provided between the one end of the body and the other end of the body.
MOLDED ELECTRONIC PACKAGE AND METHOD FOR MANUFACTURING THE SAME
Aspects of the present disclosure relate to a molded electronic package and a method for manufacturing the same. The molded electronic package includes a first substrate, a second substrate, an electronic component arranged on the first substrate, a spring member arranged between the second substrate and the electronic component, the spring member including a first contact portion being fixated relative to the second substrate, and a second contact portion physically contacting the electronic component, and a body of solidified molding compound configured to encapsulate the electronic component and the spring member and to mutually fixate the first substrate, the second substrate, the electronic component and the spring member. The second substrate and the spring member are electrically and/or thermally conductive.
MOLDED ELECTRONIC PACKAGE AND METHOD FOR MANUFACTURING THE SAME
Aspects of the present disclosure relate to a molded electronic package and a method for manufacturing the same. The molded electronic package includes a first substrate, a second substrate, an electronic component arranged on the first substrate, a spring member arranged between the second substrate and the electronic component, the spring member including a first contact portion being fixated relative to the second substrate, and a second contact portion physically contacting the electronic component, and a body of solidified molding compound configured to encapsulate the electronic component and the spring member and to mutually fixate the first substrate, the second substrate, the electronic component and the spring member. The second substrate and the spring member are electrically and/or thermally conductive.
Electrode terminal, semiconductor device, and power conversion apparatus
An electrode terminal includes a body and a first bonding part. The body includes a first metal material. Then, the first bonding part is bonded to one end of the body, and includes a second metal material which is a clad material other than the first metal material. The first bonding part is ultrasonically bondable to a first bonded member. An elastic part which is elastically deformable is provided between the one end of the body and the other end of the body.
SEMICONDUCTOR PACKAGE WITH WIRE BOND JOINTS
A semiconductor package includes: a semiconductor die attached to a leadframe and having a first bond pad at a side of the semiconductor die facing away from the leadframe; a metal clip having a first bonding region attached to the first bond pad of the semiconductor die by a plurality of first wire bonds which extend through a plurality of first openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die; and a joint between the plurality of first wire bonds and the metal clip at a side of the metal clip facing away from the semiconductor die. Additional semiconductor package embodiments and related methods of manufacture are also described.