An electronic package is provided, in which a first electronic element and a second electronic element are disposed on a first side of a circuit structure and a second side of the circuit structure, respectively, where a first metal layer is formed between the first side of the circuit structure and the first electronic element, a second metal layer is formed on a surface of the second electronic element, and at least one thermally conductive pillar is disposed on the second side of the circuit structure and extends into the circuit structure to thermally conduct the first metal layer and the second metal layer. Therefore, through the thermally conductive pillar, heat generated during operations of the first electronic element and the second electronic element can be quickly dissipated to an external environment and would not accumulate.

A microelectronic device, in a fan-out fan-in chip scale package, has a die and an encapsulation material at least partially surrounding the die. Fan-out connections from the die extend through the encapsulation material and terminate adjacent to the die. The fan-out connections include wire bonds, and are free of photolithographically-defined structures. Fan-in/out traces connect the fan-out connections to bump bond pads. The die and at least a portion of the bump bond pads partially overlap each other. The microelectronic device is formed by mounting the die on a carrier, and forming the fan-out connections, including the wire bonds, without using a photolithographic process. The die and the fan-out connections are covered with an encapsulation material, and the carrier is subsequently removed, exposing the fan-out connections. The fan-in/out traces are formed so as to connect to the exposed portions of the fan-out connections, and extend to the bump bond pads.

A method for fabricating a semiconductor package includes forming a release layer on a first carrier substrate. An etch stop layer is formed on the release layer. A first redistribution layer is formed on the etch stop layer and includes a plurality of first wires and a first insulation layer surrounding the plurality of first wires. A first semiconductor chip is formed on the first redistribution layer. A solder ball is formed between the first redistribution layer and the first semiconductor chip. A second carrier substrate is formed on the first semiconductor chip. The first carrier substrate, the release layer, and the etch stop layer are removed. The second carrier substrate is removed.

Disclosed is a method for packaging a chip, comprising the following steps: providing a baseplate formed with an open slot thereon penetrating through opposite sides of the baseplate; providing a release base material, wherein the release base material is bonded to a first side of the baseplate and covers the open slot; providing a chip, wherein the chip is mounted on the release base material at the position of the open slot; packaging a second side of the baseplate facing away from the release base material so as to form a packaging layer which packages the chip and fixes it on the baseplate; removing the release base material so as to obtain a package structure for the chip.

In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

A package includes a leadframe having first surface and a second surface opposing the first surface, the leadframe forming a plurality of leads, a first semiconductor die mounted on the first surface of the leadframe and electrically connected to at least one of the plurality of leads, a second semiconductor die mounted on the second surface of the leadframe, wire bonds electrically connecting the second semiconductor die to the leadframe, and mold compound at least partially covering the first semiconductor die, the second semiconductor die and the wire bonds.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

A package substrate and method of manufacturing a package substrate and a semiconductor device package are provided. The package substrate includes a circuit layer, an optically-cured dielectric layer, a plurality of block layers and a sacrificial layer. The circuit layer includes a plurality of conductive pads. The optically-cured dielectric layer has an upper surface and a lower surface opposite to the upper surface. The optically-cured dielectric layer covers the circuit layer, and first surfaces of the conductive pads are at least partially exposed from the upper surface of the optically-cured dielectric layer. The block layers are respectively disposed on the first surfaces of the conductive pads exposed by the optically-cured dielectric layer. The sacrificial layer is disposed on the optically-cured dielectric layer and covering the block layers.

A display substrate, including: a base substrate including at least a side edge and a display area; a plurality of pixel units disposed in the display area, a second pixel unit is located on a side of a first pixel unit close to the side edge, edges of the second pixel unit include the side edge, a third pixel unit is located between the first pixel unit and the second pixel unit, and the third pixel unit is adjacent to the second pixel unit; and a plurality of light emitting diode chips disposed on the base substrate a first light emitting diode chip is located in the first pixel unit, a part of a second light emitting diode chip is located in the second pixel unit, and the other part of the second light emitting diode chip is located in the third pixel unit.

A semiconductor package includes: semiconductor chips being offset-stacked to expose edge regions adjacent to first side surfaces; chip pads disposed in each of the edge regions of the semiconductor chips, the chip pads including a plurality of first chip pads arranged in a first column and a plurality of second chip pads arranged in a second column; a horizontal common interconnector having one end connected to the second chip pad of a semiconductor chip of the semiconductor chips, and another end connected to the first chip pad of another semiconductor chip; and a vertical common interconnector having one end connected to the second chip pad of the uppermost semiconductor chip, which is electrically connected to the first chip pad of the uppermost semiconductor chip connected to the horizontal common interconnector.