A wire bonding structure and a method of manufacturing the same are provided. The wire bonding structure includes a bonding pad structure, a protection layer and a bonding wire. The bonding pad structure includes a bonding pad and a conductive layer. The bonding pad has an opening. The conductive layer is electrically connected to the bonding pad. At least a portion of the conductive layer is located in the opening of the bonding pad and laterally surrounded by the bonding pad. The protection layer at least covers a portion of a surface of the bonding pad structure. The bonding wire is bonded to the conductive layer of the bonding pad structure.

A method includes applying a die attach material to a die pad of an integrated circuit package. The die attach material is employed as a bonding material to the die pad. The method includes mounting an integrated circuit die to the die pad of the integrated circuit via the die attach material. The method includes printing an adhesion deposition material on the die attach material appearing at the interface of the integrated circuit die and the die pad of the integrated circuit package to mitigate delamination between the integrated circuit die and the die pad.

A bonding substrate is described having a contacting pad made of copper or a copper-based alloy for bonding wire, the contacting pad being covered with a corrosion inhibitor layer containing a nitrogen-containing aliphates as an active substance and a nitrogen-containing heterocyclic aromatics as a further active substance. The corrosion inhibitor layer, without any water content, contains 5% by weight or more of urea derivative or 3% by weight or more of triphenylguanidine or 2% by weight or more of tetrazole derivative or 5% by weight or more of 1-H-benzotriazole or 5% by weight or more of benzimidazole. In addition, an electronic module having such a bonding substrate and a method of protecting from corrosion surfaces made of copper or a copper-base alloy provided for wire bonding are disclosed.

A semiconductor device provided according to an aspect of the present disclosure includes a semiconductor element, a bonding target, a first wire, a wire strip and a second wire. The bonding target is electrically connected to the semiconductor element. The first wire is made of a first metal. The first wire includes a first bonding portion bonded to the bonding target and a first line portion extending from the first bonding portion. The wire strip is made of the first metal. The wire strip is bonded to the bonding target. The second wire is made of a second metal different from the first metal. The second wire includes a second bonding portion bonded to the bonding target via the wire strip and a second line portion extending from the second bonding portion.

A method includes applying a die attach material to a die pad of an integrated circuit. The die attach material is employed as a bonding material to the die pad. The method includes mounting an integrated circuit die to the die pad of the integrated circuit via the die attach material. The method includes printing an adhesion deposition material on the die attach material appearing at the interface of the integrated circuit die and the die pad of the integrated circuit to mitigate delamination between the integrated circuit die and the die pad.

Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.

A semiconductor device provided according to an aspect of the present disclosure includes a semiconductor element, a bonding target, a first wire, a wire strip and a second wire. The bonding target is electrically connected to the semiconductor element. The first wire is made of a first metal. The first wire includes a first bonding portion bonded to the bonding target and a first line portion extending from the first bonding portion. The wire strip is made of the first metal. The wire strip is bonded to the bonding target. The second wire is made of a second metal different from the first metal. The second wire includes a second bonding portion bonded to the bonding target via the wire strip and a second line portion extending from the second bonding portion.

A multidevice package includes upper and lower surfaces with the lower surface disposed beneath a first die forming part of the package. The lower surface includes a first a set of electrical contacts and a recessed region with a second set of electrical contacts configured to allow a second die to be coupled to the lower surface and electrically coupled to the first die via the second set of contacts. The recessed region is sufficiently recessed to allow the package to be coupled to a mounting surface such as a printed circuit board via the first set of contacts while the second die remains suspended above the mounting surface.

Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.

Reliability of a semiconductor device is improved. A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.