Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/80
Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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H01L2224/85009
Pre-treatment of the connector or the bonding area
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H01L2224/8503
Reshaping, e.g. forming the ball or the wedge of the wire connector
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H01L2224/85031
by chemical means, e.g. etching, anodisation
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H01L2224/85031

METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH WIRE BOND
20230061312 · 2023-03-02 ·

A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

Method for preparing semiconductor device with wire bond
11876072 · 2024-01-16 · ·

A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH WIRE BOND
20240063175 · 2024-02-22 ·

A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

Method for preparing semiconductor device with wire bond
12113046 · 2024-10-08 · ·

A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).