Aspects of the disclosure relate generally to semiconductor packaging, and specifically to semiconductor device having a lead frame having a semiconductor supporting die pad that is capable of engaging with a wire bonding clamp.

A method of manufacturing a semiconductor device that includes an insulated circuit board having a conductive pattern, a first semiconductor chip with a rectangular shape connected through a first joining material to the conductive pattern, a second semiconductor chip with a rectangular shape disposed on the conductive pattern separated from the first semiconductor chip and connected through a second joining material to the conductive pattern, a terminal disposed above the semiconductor chips, respectively connected to the first and second semiconductor chips through third and fourth joining materials, the terminal having a through-hole above a place between the first and second semiconductor chips, the method including a positioning step in which the first and second semiconductor chips are respectively positioned at at least three positioning places, and at least one of the positioning places is positioned with a positioning member inserted into the through-hole.

Aspects of the disclosure relate generally to semiconductor packaging, and specifically to semiconductor device having a lead frame having a semiconductor supporting die pad that is capable of engaging with a wire bonding clamp.

A manufacturing method for a wire bonding structure of the present invention includes a step of preparing a wire made of Cu and a step of joining the wire to a first joining target formed on an electronic device. Before the joining step, the wire has an outer circumferential surface and a withdrawn surface. The withdrawn surface is withdrawn toward a central axis of the wire from the outer circumferential surface. In the joining step, ultrasonic vibration is applied to the wire in a state in which the withdrawn surface is pressed against the first joining target.

A method of manufacturing a semiconductor device that includes an insulated circuit board having a conductive pattern, a first semiconductor chip with a rectangular shape connected through a first joining material to the conductive pattern, a second semiconductor chip with a rectangular shape disposed on the conductive pattern separated from the first semiconductor chip and connected through a second joining material to the conductive pattern, a terminal disposed above the semiconductor chips, respectively connected to the first and second semiconductor chips through third and fourth joining materials, the terminal having a through-hole above a place between the first and second semiconductor chips, the method including a positioning step in which the first and second semiconductor chips are respectively positioned at at least three positioning places, and at least one of the positioning places is positioned with a positioning member inserted into the through-hole.

A semiconductor device has a plurality of small-sized semiconductor chips disposed between an insulated circuit board having a conductive pattern and a terminal. The semiconductor device exhibits a high accuracy in positioning the semiconductor chips. The semiconductor device includes an insulated circuit board having a conductive pattern, a first semiconductor chip with a rectangular shape connected to the conductive pattern through a first joining material, a second semiconductor chip with a rectangular shape, disposed on the conductive pattern separated from the first semiconductor chip and connected to the conductive pattern through a second joining material, and a terminal disposed above the first semiconductor chip and the second semiconductor chip, connected to the first semiconductor chip through a third joining material, and connected to the second semiconductor chip through a fourth joining material. The terminal has a through-hole above a place between the first semiconductor chip and the second semiconductor chip.

A manufacturing method for a wire bonding structure of the present invention includes a step of preparing a wire made of Cu and a step of joining the wire to a first joining target formed on an electronic device. Before the joining step, the wire has an outer circumferential surface and a withdrawn surface. The withdrawn surface is withdrawn toward a central axis of the wire from the outer circumferential surface. In the joining step, ultrasonic vibration is applied to the wire in a state in which the withdrawn surface is pressed against the first joining target.

A method forming a bond wire connection includes providing a wire bonder including a bond wedge with a wire guide, and forming a wire bond loop by initially bonding a bond wire to a first bonding surface using the bond wedge, then moving the wire bonder in a loop pattern whereby the bond wire passes through the wire guide, and then bonding the bond wire to a second bonding surface using the bond wedge, wherein moving the wire bonder in the loop pattern comprises a retrograde movement whereby the wire bonder moves away from the second bonding surface, and wherein the wire guide is formed from a material with a higher material hardness than the bond wire.