The present disclosure provides a redistribution layer (RDL) structure, a semiconductor device and manufacturing method thereof. The semiconductor device comprising an RDL structure that may include a substrate, a first conductive layer, a reinforcement layer and, and a second conductive layer. The first conductive layer may be formed on the substrate and has a first bond pad area. The reinforcement layer may be formed on a surface of the first conductive layer facing away from the substrate and located in the first bond pad area. The second conductive layer may be formed on the reinforcement layer and an area of the first conductive layer not covered by the reinforcement layer. The reinforcement layer has a material strength greater than those of the first conductive layer and the second conductive layer.

The present disclosure provides a redistribution layer (RDL) structure, a semiconductor device and manufacturing method thereof. The semiconductor device comprising an RDL structure that may include a substrate, a first conductive layer, a reinforcement layer and, and a second conductive layer. The first conductive layer may be formed on the substrate and has a first bond pad area. The reinforcement layer may be formed on a surface of the first conductive layer facing away from the substrate and located in the first bond pad area. The second conductive layer may be formed on the reinforcement layer and an area of the first conductive layer not covered by the reinforcement layer. The reinforcement layer has a material strength greater than those of the first conductive layer and the second conductive layer.

Provided is a method for manufacturing a semiconductor device which connects a first bond point and a second bond point by a wire. The method includes: a ball bonding step in which a crimping ball and a ball neck are formed at the first bond point by ball bonding; a thin-walled portion forming step in which a thin-walled portion having a reduced cross-sectional area is formed between the ball neck and the crimping ball; a wire tail separating step in which after a capillary is raised to unroll a wire tail, the capillary is moved in a direction to the second bond point, and the wire tail and the crimping ball are separated in the thin-walled portion; and a wire tail joining step in which the capillary is lowered and a side surface of the separated wire tail is joined onto the crimping ball.

Provided is a wire-bonding apparatus (10) including: a capillary (28) through which a wire (30) inserted; and a controller (80). The controller (80) is configured to execute operations including: a disconnection operation, after the second bonding operation, of moving the capillary through which the wire is inserted within a horizontal plane vertical to an axial direction of the capillary while the wire is held in the clamped state, and thereby disconnecting the wire from the second bonding point; a preliminary bonding operation of feeding the wire from the second bonding point to a predetermined preliminary bonding point, and performing preliminary bonding at the preliminary bonding point; and a shaping operation, after the preliminary bonding operation, of shaping the wire projecting from a tip of the capillary into a predetermined flexed shape.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

A silicon carbide semiconductor device, including a semiconductor substrate containing silicon carbide, a bonding wire, and a surface electrode of an aluminum alloy containing silicon, the surface electrode being provided on a surface of the semiconductor substrate, and having a joint portion to which the bonding wire is bonded. The surface electrode has a plurality of silicon nodules formed therein, which include a number of the silicon nodules formed in the joint portion. One of the number of the silicon nodules is of a dendrite structure, and is included at an area percentage of at least 10% relative to a total area of the number of the silicon nodules in the joint portion.

The present disclosure provides a redistribution layer (RDL) structure, a semiconductor device and manufacturing method thereof. The semiconductor device comprising an RDL structure that may include a substrate, a first conductive layer, a reinforcement layer and, and a second conductive layer. The first conductive layer may be formed on the substrate and has a first bond pad area. The reinforcement layer may be formed on a surface of the first conductive layer facing away from the substrate and located in the first bond pad area. The second conductive layer may be formed on the reinforcement layer and an area of the first conductive layer not covered by the reinforcement layer. The reinforcement layer has a material strength greater than those of the first conductive layer and the second conductive layer. The semiconductor device and the manufacturing method provided by the present disclosure may improve the performance of the semiconductor device.

The present disclosure provides a redistribution layer (RDL) structure, a semiconductor device and manufacturing method thereof. The semiconductor device comprising an RDL structure that may include a substrate, a first conductive layer, a reinforcement layer and, and a second conductive layer. The first conductive layer may be formed on the substrate and has a first bond pad area. The reinforcement layer may be formed on a surface of the first conductive layer facing away from the substrate and located in the first bond pad area. The second conductive layer may be formed on the reinforcement layer and an area of the first conductive layer not covered by the reinforcement layer. The reinforcement layer has a material strength greater than those of the first conductive layer and the second conductive layer. The semiconductor device and the manufacturing method provided by the present disclosure may improve the performance of the semiconductor device.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.