A method is provided. The method includes one or more of extracting a die from an original packaged integrated circuit, modifying the extracted die, reconditioning the modified extracted die, placing the reconditioned die into a cavity of a hermetic package base, bonding a plurality of bond wires between reconditioned die pads of the reconditioned die to leads of the hermetic package base or downbonds to create an assembled hermetic package base, and sealing a hermetic package lid to the assembled hermetic package base to create a new packaged integrated circuit. Modifying the extracted die includes removing the one or more ball bonds on the one or more die pads. Reconditioning the modified extracted die includes adding a sequence of metallic layers to bare die pads of the modified extracted die. The extracted die is a fully functional semiconductor die with one or more ball bonds on one or more die pads of the extracted die.

A method of packaging a semiconductor device includes: bonding a ball at an end of a bond wire to a bond pad of a semiconductor device die in an aperture of a shielding layer of the semiconductor device; and sealing the part of the bond pad exposed by the aperture of the shielding layer by deforming the ball of the bond wire to fill the aperture of the shielding layer. The aperture of the shielding layer includes an edge wall, and exposes a part of the bond pad. The shielding layer covers a remaining part of the bond pad. The aperture of the shielding layer is completely filled with the ball of the bond wire, thereby deforming the edge wall of the shielding layer.

A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

Disclosed are examples of integrated circuit (IC) packages. Each IC package may include a flip-chip (FC) die on a substrate, a wire bond die above the FC die, a wire bond connected to the wire bond die, and a mold on the substrate and encapsulating the FC die, the wire bond die, and the wire bond. The substrate may include least a first metallization layer includes a first substrate layer, a trace on the first substrate layer and routed within the first metallization layer to electrically couple with one or more FC interconnects of the FC die, and a bond finger pad formed on the trace. The bond finger pad may be circular. The wire bond may electrically connect to the trace such that the wire bond die is electrically coupled with the FC die through the wire bond, the bond finger pad, and the trace.

A semiconductor device capable of securing an insulation distance between a semiconductor element and a wiring. The semiconductor device includes a first semiconductor element, a second semiconductor element, a first wiring, and a second wiring. The first semiconductor element includes a first main surface and a second main surface. An electrode is formed on the first main surface. The second semiconductor element is disposed at a position different from a position of the first semiconductor element in a thickness direction. The first wiring includes an end connected to the electrode. The end includes an upper surface and a cut surface. Diameter of the second wiring is smaller than diameter of the first wiring. The second wiring includes a first end and a second end. The first end is directly connected to the upper surface of the end of the first wiring.

A semiconductor package includes a carrier having a recess, a semiconductor die arranged on the carrier such that a first side of the semiconductor die faces the carrier, and a contact clip arranged over a second side of the semiconductor die, opposite the first side. The contact clip includes a lowered part. The lowered part is arranged in the recess.

A method of manufacturing a semiconductor device includes: forming a first electrode and a second electrode on an insulating layer so as to be apart from each other; forming a barrier made of same material as a metal terminal on a peripheral portion of an ultrasonic bonding portion of the metal terminal; and applying pressing force and ultrasonic vibration to the ultrasonic bonding portion of the metal terminal by using an ultrasonic tool to ultrasonically bond the metal terminal to the first electrode.

A method of manufacturing a semiconductor device includes: forming a first electrode and a second electrode on an insulating layer so as to be apart from each other; forming a barrier made of same material as a metal terminal on a peripheral portion of an ultrasonic bonding portion of the metal terminal; and applying pressing force and ultrasonic vibration to the ultrasonic bonding portion of the metal terminal by using an ultrasonic tool to ultrasonically bond the metal terminal to the first electrode.

An electrical interconnection includes a wire loop having a first end bonded to a first bonding site using a first bonding portion, and a second end bonded to a second bonding site using a second bonding portion. The second bonding portion includes a folded portion having a wire that extends from the second end of the wire loop and is folded on the second bonding site. The folded portion includes a first folded portion connected to the second end of the wire loop and extending toward the first bonding site, a second folded portion provided on the first folded portion, and a tail protruding from a portion of the second folded portion. An interface is formed between the first and second folded portions. A top surface of the second folded portion includes an inclined surface recessed toward the first folded portion.

A fabrication method of the device includes provision of a first stack including: a first substrate including at least one main surface provided with at least a first electric contact area, a second substrate provided with a salient spacer. The first substrate is assembled with the second substrate so as to define at least a first lateral groove including the first electric contact area, the first lateral groove being bounded by the first substrate, the second substrate and the spacer includes at least a first protuberance arranged to form a stop and to limit movement of the spacer relatively to the first substrate in at least a first direction passing via the first lateral groove and the spacer and a second direction parallel the longitudinal axis of the first groove and perpendicular to the first direction.