A semiconductor module is provided with: a case having a frame that surrounds a substrate and a terminal block formed extending inward from an inner wall surface of the frame; a terminal having one end extending outward from the frame, and another end extending inward from the frame and being secured to a top face of the terminal block; a wiring member that electrically connects the terminal and a semiconductor element on the substrate; and an encapsulating resin that encapsulates the other end of the terminal, the wiring member, and the semiconductor element inside the case. A hole is formed in the top face of the terminal block. The hole is filled with the encapsulating resin, and is positioned closer to the inner wall surface of the frame than a bonding part between the terminal and the wiring member.

A semiconductor module is provided with: a case having a frame that surrounds a substrate and a terminal block formed extending inward from an inner wall surface of the frame; a terminal having one end extending outward from the frame, and another end extending inward from the frame and being secured to a top face of the terminal block; a wiring member that electrically connects the terminal and a semiconductor element on the substrate; and an encapsulating resin that encapsulates the other end of the terminal, the wiring member, and the semiconductor element inside the case. A hole is formed in the top face of the terminal block. The hole is filled with the encapsulating resin, and is positioned closer to the inner wall surface of the frame than a bonding part between the terminal and the wiring member.

A description is given of a power semiconductor module 10 which can be transferred from a normal operating mode to an explosion-free robust short-circuit failure mode. Said power semiconductor module 10 comprises a power semiconductor 1 having metallizations 3 which form potential areas and are separated by insulations and passivations on the top side 2 of said power semiconductor. Furthermore, an electrically conductive connecting layer is provided, on which at least one metal shaped body 4 which has a low lateral electrical resistance and is significantly thicker than the connecting layer is arranged, said at least one metal shaped body being applied by sintering of the connecting layer such that said metal shaped body is cohesively connected to the respective potential area. The metal shaped body 4 is embodied and designed with means for laterally homogenizing a current flowing through it in such a way that a lateral current flow component 5 is maintained until this module switches off in order to avoid an explosion, wherein the metal shaped body 4 has connections 6 having high-current capability. A transition from the operating mode to the robust failure mode then takes place in an explosion-free manner by virtue of the fact that the connections 6 are contact-connected and dimensioned in such a way that in the case of overload currents of greater than a multiple of the rated current of the power semiconductor 1, the operating mode changes to the short-circuit failure mode with connections 6 remaining on the metal shaped body 4 in an explosion-free manner without the formation of arcs.

A semiconductor module is provided with: a case having a frame that surrounds a substrate and a terminal block formed extending inward from an inner wall surface of the frame; a terminal having one end extending outward from the frame, and another end extending inward from the frame and being secured to a top face of the terminal block; a wiring member that electrically connects the terminal and a semiconductor element on the substrate; and an encapsulating resin that encapsulates the other end of the terminal, the wiring member, and the semiconductor element inside the case. A hole is formed in the top face of the terminal block. The hole is filled with the encapsulating resin, and is positioned closer to the inner wall surface of the frame than a bonding part between the terminal and the wiring member.

A semiconductor module is provided with: a case having a frame that surrounds a substrate and a terminal block formed extending inward from an inner wall surface of the frame; a terminal having one end extending outward from the frame, and another end extending inward from the frame and being secured to a top face of the terminal block; a wiring member that electrically connects the terminal and a semiconductor element on the substrate; and an encapsulating resin that encapsulates the other end of the terminal, the wiring member, and the semiconductor element inside the case. A hole is formed in the top face of the terminal block. The hole is filled with the encapsulating resin, and is positioned closer to the inner wall surface of the frame than a bonding part between the terminal and the wiring member.

An integrated circuit device includes a substrate, a joining part provided on the substrate and joined to a vibrator, and a plurality of bonding pads provided on the substrate. The joining part includes an insulating protective film that covers a part of a surface of the substrate, and no insulating protective film is provided between the adjacent bonding pads.

A disclosed circuit arrangement includes a flexible substrate. A layer of pressure sensitive adhesive (PSA) is directly adhered to a first major surface of the substrate. One or more metal foil pads and electrically conductive wire are attached directly on a surface of the PSA layer. The wire has a round cross-section and one or more portions directly connected to the one or more metal foil pads with one or more weld joints, respectively. An electronic device is attached directly on the surface of the layer of PSA and is electrically connected to the one or more portions of the round wire by one or more bond wires, respectively.

A package substrate including an insulating layer having a top surface and a bottom surface opposite to the top surface, at least one first copper pattern disposed in the insulating layer and adjacent to the top surface of the insulating layer, at least one second copper pattern disposed on the bottom surface of the insulating layer, and at least one embedded aluminum pad disposed on the at least one first copper pattern, the at least one embedded aluminum pad disposed in the insulating layer such that a top surface of the at least one embedded aluminum pad is exposed by the insulating layer may be provided.

A manufacturing method for a wire bonding structure of the present invention includes a step of preparing a wire made of Cu and a step of joining the wire to a first joining target formed on an electronic device. Before the joining step, the wire has an outer circumferential surface and a withdrawn surface. The withdrawn surface is withdrawn toward a central axis of the wire from the outer circumferential surface. In the joining step, ultrasonic vibration is applied to the wire in a state in which the withdrawn surface is pressed against the first joining target.

A semiconductor device includes a die pad, a semiconductor chip with a bonding pad being formed, a lead one end of which is located in the vicinity of the semiconductor chip, a coupling wire that connects an electrode and the lead, and a sealing body that seals the semiconductor chip, the coupling wire, a part of the lead, and a part of the die pad. A lower surface of the die pad is exposed from a lower surface of the sealing body, the die pad and the coupling wire are comprised of copper, and a thickness of the semiconductor chip is larger than the sum of a thickness of the die pad and a thickness from an upper surface of the semiconductor chip to an upper surface of the sealing body.