H01L2224/8549

IC carrier of semiconductor package and manufacturing method thereof

The present invention discloses an IC Carrier of a semiconductor package and its manufacturing method. The IC Carrier of the semiconductor package includes a dielectric layer and a patterned conductor layer. The dielectric layer has at least one opening groove. The patterned conductor layer is embedded in the dielectric layer, wherein a part of the patterned conductor layer is as a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer is as a conductive wire, which only has one exposed end.

IC carrier of semiconductor package and manufacturing method thereof

The present invention discloses an IC Carrier of a semiconductor package and its manufacturing method. The IC Carrier of the semiconductor package includes a dielectric layer and a patterned conductor layer. The dielectric layer has at least one opening groove. The patterned conductor layer is embedded in the dielectric layer, wherein a part of the patterned conductor layer is as a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer is as a conductive wire, which only has one exposed end.

IC Carrier of Semiconductor Package and Manufacturing Method Thereof
20170162492 · 2017-06-08 ·

The present invention discloses an IC Carrier of a semiconductor package and its manufacturing method. The IC Carrier of the semiconductor package includes a dielectric layer and a patterned conductor layer. The dielectric layer has at least one opening groove. The patterned conductor layer is embedded in the dielectric layer, wherein a part of the patterned conductor layer is as a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer is as a conductive wire, which only has one exposed end.

IC Carrier of Semiconductor Package and Manufacturing Method Thereof
20170162492 · 2017-06-08 ·

The present invention discloses an IC Carrier of a semiconductor package and its manufacturing method. The IC Carrier of the semiconductor package includes a dielectric layer and a patterned conductor layer. The dielectric layer has at least one opening groove. The patterned conductor layer is embedded in the dielectric layer, wherein a part of the patterned conductor layer is as a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer is as a conductive wire, which only has one exposed end.

Electronic package structure and fabrication method thereof

A method for fabricating an electronic package structure is provided, which includes the steps of: forming a circuit layer on a conductor; disposing an electronic element on the circuit layer; forming an insulating layer on the conductor to encapsulate the electronic element and the circuit layer; and removing portions of the conductor so as to cause the remaining portions of the conductor to constitute a plurality of conductive bumps. As such, when the electronic package structure is disposed on a circuit board through an SMT (Surface Mount Technology) process, the conductive bumps are easily aligned with contacts of the circuit board, thereby effectively improving the yield of the SMT process.