A semiconductor package may include a semiconductor chip on a package substrate. The semiconductor package may include a plurality of conductive connections connecting the semiconductor chip to the package substrate may be disposed, a plurality of towers which are apart from one another and each include a plurality of memory chips may be disposed, wherein a lowermost memory chip of each of the plurality of towers overlaps the semiconductor chip from a top-down view. The semiconductor package further includes a plurality of adhesive layers be attached between the lowermost memory chip of each of the plurality of towers and the semiconductor chip.

A semiconductor package may include a semiconductor chip on a package substrate. The semiconductor package may include a plurality of conductive connections connecting the semiconductor chip to the package substrate may be disposed, a plurality of towers which are apart from one another and each include a plurality of memory chips may be disposed, wherein a lowermost memory chip of each of the plurality of towers overlaps the semiconductor chip from a top-down view. The semiconductor package further includes a plurality of adhesive layers be attached between the lowermost memory chip of each of the plurality of towers and the semiconductor chip.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

The carrier-foil-attached ultra-thin copper foil according to one embodiment of the present invention comprises a carrier foil, a release layer, a first ultra-thin copper foil, an Al layer, and a second ultra-thin copper foil, wherein the release layer may comprise a first metal (A1) having peeling properties, and a second metal (B1) and third metal (C1) facilitating the plating of the first metal (A1).

The carrier-foil-attached ultra-thin copper foil according to one embodiment of the present invention comprises a carrier foil, a release layer, a first ultra-thin copper foil, an Al layer, and a second ultra-thin copper foil, wherein the release layer may comprise a first metal (A1) having peeling properties, and a second metal (B1) and third metal (C1) facilitating the plating of the first metal (A1).

A semiconductor package may include a semiconductor chip on a package substrate. The semiconductor package may include a plurality of conductive connections connecting the semiconductor chip to the package substrate may be disposed, a plurality of towers which are apart from one another and each include a plurality of memory chips may be disposed, wherein a lowermost memory chip of each of the plurality of towers overlaps the semiconductor chip from a top-down view. The semiconductor package further includes a plurality of adhesive layers be attached between the lowermost memory chip of each of the plurality of towers and the semiconductor chip.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

The method for fabricating a device includes the following successive steps: providing a first substrate made from silicon of (100), (110) or (111) orientation, from a material of III-IV type or from a material of II-VI type, provided with at least one salient metal pad, and providing a second substrate; fixing the first substrate with the second substrate, the at least one metal pad forming a blocking means preventing movement beyond a threshold position; and performing an anneal of the metal pad so as to melt the metal pad and eliminate the blocking means.