In wire bonding in assembling of a semiconductor device, an Al wire is coupled to a lead section by a wedge which is a bonding tool, thereafter, the wedge is withdrawn from the top of the lead section and a cutter is lowered and the Al wire is cut off in this state. Lowering of the cutter is stopped at a point in time that a stopper which is lowered simultaneously with lowering of the cutter has truck against the lead section and cutting of the Al wire is terminated by stopping of lowering of the cutter.

The conductive wire is bonded to the front electrode of the semiconductor device at the bonding section. The first resin member covers at least one end portion of two end portions of the bonding section, the first surface of the front electrode, and the second surface of the conductive wire. The second resin member covers the bent portion of the first resin member. The first resin member has a higher break elongation and a higher break strength than the second resin member. The second tensile elastic modulus of the second resin member is greater than the first tensile elastic modulus of the first resin member. Thereby, the reliability of the power semiconductor module is improved.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

A mechanism is provided to reduce a distance of a waveguide antenna from transmit and receive circuitry in an integrated circuit device die. This distance reduction is performed by providing vertical access to radio frequency connections on a top surface of the IC device die. A cavity in the encapsulant of the package can be formed to provide access to the connections and plated to perform a shielding function. A continuous connection from the RF pads is used as a vertical interconnect. The region around the vertical interconnect can be filled with encapsulant potting material and back grinded to form a surface of the semiconductor device package. A waveguide antenna feed can be plated or printed on the vertical interconnect on the surface of the package.

A mechanism is provided to reduce a distance of a waveguide antenna from transmit and receive circuitry in an integrated circuit device die. This distance reduction is performed by providing vertical access to radio frequency connections on a top surface of the IC device die. A cavity in the encapsulant of the package can be formed to provide access to the connections and plated to perform a shielding function. A continuous connection from the RF pads is used as a vertical interconnect. The region around the vertical interconnect can be filled with encapsulant potting material and back grinded to form a surface of the semiconductor device package. A waveguide antenna feed can be plated or printed on the vertical interconnect on the surface of the package.

A mechanism is provided to reduce a distance of a waveguide antenna from transmit and receive circuitry in an integrated circuit device die. This distance reduction is performed by providing vertical access to radio frequency connections on a top surface of the IC device die. A cavity in the encapsulant of the package can be formed to provide access to the connections and plated to perform a shielding function. A continuous connection from the RF pads is used as a vertical interconnect. The region around the vertical interconnect can be filled with encapsulant potting material and back grinded to form a surface of the semiconductor device package. A waveguide antenna feed can be plated or printed on the vertical interconnect on the surface of the package.

A mechanism is provided to reduce a distance of a waveguide antenna from transmit and receive circuitry in an integrated circuit device die. This distance reduction is performed by providing vertical access to radio frequency connections on a top surface of the IC device die. A cavity in the encapsulant of the package can be formed to provide access to the connections and plated to perform a shielding function. A continuous connection from the RF pads is used as a vertical interconnect. The region around the vertical interconnect can be filled with encapsulant potting material and back grinded to form a surface of the semiconductor device package. A waveguide antenna feed can be plated or printed on the vertical interconnect on the surface of the package.

The conductive wire is bonded to the front electrode of the semiconductor device at the bonding section. The first resin member covers at least one end portion of two end portions of the bonding section, the first surface of the front electrode, and the second surface of the conductive wire. The second resin member covers the bent portion of the first resin member. The first resin member has a higher break elongation and a higher break strength than the second resin member. The second tensile elastic modulus of the second resin member is greater than the first tensile elastic modulus of the first resin member. Thereby, the reliability of the power semiconductor module is improved.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.