A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor package includes a first lead with first and second ends extending in the same direction as one another. At least one second lead has first and second ends and is partially surrounded by the first lead. A die pad is provided and a die is connected to the die pad. Wires electrically connect the die to the first lead and the at least one second lead. An insulating layer extends over the leads, the die pad, and the die such that the first end of the at least one second lead is exposed from the semiconductor package and the second end of the first lead is encapsulated entirely within the insulating layer.

In examples, a method of manufacturing a semiconductor package comprises providing an array of unsingulated semiconductor packages, the array having a bottom surface and a conductive terminal exposed to the bottom surface, the conductive terminal including a slot configured to receive solder material. The method includes coupling a tape to the array of unsingulated semiconductor packages and applying a first saw blade to the bottom surface of the array to partially saw through a thickness of the array to a depth between two individual, adjacent, unsingulated semiconductor packages in the array of unsingulated semiconductor packages, the first saw blade producing a kerf. The method includes applying a second saw blade into the kerf to fully saw through the thickness of the array and produce a singulated semiconductor package, a width of the second saw blade narrower than the first saw blade. The conductive terminal is exposed to a side surface of the singulated semiconductor package, the side surface including a recessed area having a horizontal depth of no more than 30 microns.

Provided is a method for manufacturing a semiconductor device which connects a first bond point and a second bond point by a wire. The method includes: a ball bonding step in which a crimping ball and a ball neck are formed at the first bond point by ball bonding; a thin-walled portion forming step in which a thin-walled portion having a reduced cross-sectional area is formed between the ball neck and the crimping ball; a wire tail separating step in which after a capillary is raised to unroll a wire tail, the capillary is moved in a direction to the second bond point, and the wire tail and the crimping ball are separated in the thin-walled portion; and a wire tail joining step in which the capillary is lowered and a side surface of the separated wire tail is joined onto the crimping ball.

To prevent damage to an imaging element configured by bonding a plurality of semiconductor chips together. The imaging element includes a plurality of semiconductor chips each having a semiconductor substrate and a wiring region. One of the plurality of semiconductor chips is provided with a photoelectric conversion unit for performing photoelectric conversion of incident light. Two of the plurality of semiconductor chips are provided with first pads in which surfaces of wiring regions of the two semiconductor chips are bonded to each other and which are arranged on the surfaces of the wiring regions and bonded to each other. At least one of the two semiconductor chips is provided with a second pad arranged in the wiring region and having a protrusion formed thereon so as to face toward the bonded surface. The second pad is configured to have a size different from that of the first pad.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 10.sup.1 Ω.Math.cm and 10.sup.10 Ω.Math.cm.

A multi-chip package may include a package substrate including a first substrate pad and a second substrate pad, first semiconductor chips stacked on the package substrate in a steplike shape along a first direction, second semiconductor chips stacked on the first semiconductor chips in a steplike shape along a second direction opposite the first direction, first pad wires electrically connecting first bonding pads of the first semiconductor chips with each other, second pad wires electrically connecting second bonding pads of the second semiconductor chips with each other, a first substrate wire electrically connecting the first substrate pad with a first bonding pad of any one among the first semiconductor chips except for a lowermost first semiconductor chip, and a second substrate wire electrically connecting the second substrate pad with a second bonding pad of any one among the second semiconductor chips except for a lowermost second semiconductor chip.