A method of fabricating a bridged multi-chip assembly structure includes providing a carrier substrate. The method further includes arranging a plurality of chips on the carrier substrate in a predetermined layout. Each chip has a front surface including a set of terminals formed thereon. The method further includes depositing a molding material between the plurality of chips and on the carrier substrate. The method further includes removing the carrier substrate from the plurality of chips fixed by the molding material. The method further includes bonding a bridge chip to corresponding sets of terminals of at least two chips of the plurality of chips fixed by the molding material.

A semiconductor package includes a semiconductor package includes first, second, third and fourth semiconductor chips sequentially stacked on one another. Each of the first, second, third and fourth semiconductor chips includes a first group of bonding pads and a second group of bonding pads alternately arranged in a first direction and input/output (I/O) circuitry selectively connected to the first group of bonding pads respectively. Each of the first, second and third semiconductor chips includes a first group of through electrodes electrically connected to the first group of bonding pads and a second group of through electrodes electrically connected to the second group of bonding pads.

A semiconductor package includes a logic die surrounded by a molding compound; a memory die disposed in proximity to the logic die; a plurality of vias around the logic die for electrically connecting the logic die to the memory die. Each of the plurality of vias has an oval shape or a rectangular shape when viewed from above. The vias have a horizontal pitch along a first direction and a vertical pitch along a second direction. The vertical pitch is greater than the horizontal pitch.

A display device and method for fabrication thereof includes a plurality of pixel electrodes and common electrode connection parts that are spaced from each other on a first substrate, a plurality of light emitting elements on the plurality of pixel electrodes, a plurality of common electrode elements on the common electrode connection parts, and a common electrode layer on the plurality of light emitting elements and the plurality of common electrode elements, wherein each of the plurality of light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, each of the plurality of common electrode elements includes at least the second semiconductor layer, and the common electrode layer includes a same material as the second semiconductor layer to be connected to the second semiconductor layers of the plurality of light emitting elements.

A display device and method for fabrication thereof are provided. The display device includes a first substrate, pixel electrodes on the first substrate, light emitting elements respectively on the pixel electrodes, and including first semiconductor layers, second semiconductor layers, active layers respectively between the first semiconductor layers and the second semiconductor layers, a first light emitting element including a first active layer of the active layers, a second light emitting element including a second active layer of the active layers that is different from the first active layer, a third light emitting element including a third active layer of the active layers that is different from the first and second active layers, and a fourth light emitting element including a fourth active layer of the active layers that is different from the first to third active layers, and a common electrode layer on the light emitting elements.

A semiconductor package includes a base substrate; an interposer substrate including a semiconductor substrate having a first surface facing the base substrate and a second surface, opposing the first surface, and a passivation layer on at least a portion of the first surface; a plurality of connection bumps between the base substrate and the interposer substrate; an underfill resin in a space between the base substrate and the interposer substrate; and a first semiconductor chip and a second semiconductor chip on the interposer substrate. The interposer substrate has a first region, in which the plurality of connection bumps are included, and a second region and a third region adjacent a periphery of the first region, and the passivation layer is in the second region and includes a first embossed pattern in the second region.

A semiconductor device has an electronic component assembly with a substrate and a plurality of electrical components disposed over the substrate. A conductive post is formed over the substrate. A molding compound sheet is disposed over the electrical component assembly. A carrier including a first electrical circuit pattern is disposed over the molding compound sheet. The carrier is pressed against the molding compound sheet to dispose a first encapsulant over and around the electrical component assembly and embed the first electrical circuit pattern in the first encapsulant. A shielding layer can be formed over the electrical components assembly. The carrier is removed to expose the first electrical circuit pattern. A second encapsulant is deposited over the first encapsulant and the first electrical circuit pattern. A second electrical circuit pattern is formed over the second encapsulant. A semiconductor package is disposed over the first electrical circuit pattern.

A semiconductor package includes a package substrate including an insulating layer having an upper surface and a lower surface and provided with a first region which is recessed to a first depth from the upper surface toward the lower surface, a redistribution wiring buried in the insulating layer, a chip connection pad on a bottom surface of the recessed first region and connected to the redistribution wiring, and a wire connection pad on the upper surface of the insulating layer and connected to the redistribution wiring, a first semiconductor chip overlapping, in a top-down view of the semiconductor package, the recessed first region of the insulating layer and comprising a first chip pad connected to the chip connection pad of the package substrate, and a second semiconductor chip on the first semiconductor chip and connected to the wire connection pad of the package substrate through a conductive wire.

A multi-chip package including a first integrated circuit and a second integrated circuit. The first integrated circuit includes a first side having a first conductive layer, a second side having a second conductive layer, and an edge, the first conductive layer coupled to the second conductive layer at a location adjacent to the edge. The second integrated circuit is coupled to the second conductive layer of the first integrated circuit.

Methods of coupling inductors in an IC device using interconnecting elements with solder caps and the resulting device are disclosed. Embodiments include forming a top inductor structure, in a top inductor area on a lower surface of a top substrate, the top inductor structure having first and second top terminals at its opposite ends; forming a bottom inductor structure, in a bottom inductor area on an upper surface of a bottom substrate, the bottom inductor structure having first and second bottom terminals at its opposite ends; forming top interconnecting elements on the lower surface of the top substrate around the top inductor area; forming bottom interconnecting elements on the upper surface of the bottom substrate around the bottom inductor area; forming solder bumps on lower and upper surfaces, respectively, of the top and bottom interconnecting elements; and connecting the top and bottom interconnecting elements to each other.