H01L2224/92166

SHIELDED ELECTRONIC PACKAGE AND METHOD OF FABRICATION

An electronic device package includes a first die coupled to a substrate, a second die coupled with the first die, and a spacer element coupled to the second die to form a stacked structure that includes the first die, the second die, and the spacer element. An electrically conductive shield overlies the stacked structure. The shield has a first end coupled to the spacer element and a second end coupled to the substrate. Inter-chip bond wires may electrically interconnect the first and second dies, and the shield may additionally overlie the bond wires. The spacer element may extend above a surface of the second die at a height that is sufficient to prevent the shield from touching the inter-chip bond wires.

Semiconductor package and method of forming a semiconductor package

A semiconductor package is provided. The semiconductor package may include at least one semiconductor chip including a contact pad configured to conduct a current, a conductor element, wherein the conductor element is arranged laterally overlapping the contact pad and with a distance to the contact pad, at least one electrically conductive spacer, a first adhesive system configured to electrically and mechanically connect the at least one electrically conductive spacer with the contact pad, and a second adhesive system configured to electrically and mechanically connect the at least one electrically conductive spacer with the conductor element, wherein the conductor element is electrically conductively connected to a clip or is at least part of a clip, and wherein the spacer is configured to electrically conductively connect the contact pad with the laterally overlapping portion of the conductor element.

Shielded electronic package and method of fabrication

An electronic device package includes a first die coupled to a substrate, a second die coupled with the first die, and a spacer element coupled to the second die to form a stacked structure that includes the first die, the second die, and the spacer element. An electrically conductive shield overlies the stacked structure. The shield has a first end coupled to the spacer element and a second end coupled to the substrate. Inter-chip bond wires may electrically interconnect the first and second dies, and the shield may additionally overlie the bond wires. The spacer element may extend above a surface of the second die at a height that is sufficient to prevent the shield from touching the inter-chip bond wires.

Method for Fabricating a Semiconductor Device by Using Different Connection Methods for the Semiconductor Die and the Clip

A semiconductor device includes a carrier, a first external contact, a second external contact, and a semiconductor die. The semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The semiconductor die is disposed with the first main face on the carrier. A clip connects the second contact pad to the second external contact. A first bond wire is connected between the third contact pad and the first external contact. The first bond wire is disposed at least partially under the clip.

Semiconductor Die being Connected with a Clip and a Wire which is Partially Disposed Under the Clip
20210175200 · 2021-06-10 ·

A semiconductor device includes a first carrier, a first external contact, a second external contact, and a first semiconductor die. The first semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The first semiconductor die is disposed with the first main face on the first carrier. A clip connects the second contact pad and the second external contact. A first wire is connected with the first external contact. The first wire is disposed at least partially under the clip.

Stray inductance reduction in packaged semiconductor devices

In a general aspect, a semiconductor device can include a substrate and a positive power supply terminal electrically coupled with the substrate, the positive power supply terminal being arranged in a first plane. The device can also include a first negative power supply terminal, laterally disposed from the positive power supply terminal and arranged in the first plane. The device can further include a second negative power supply terminal, laterally disposed from the positive power supply terminal and arranged in the first plane. The positive power supply terminal can be disposed between the first and second negative power supply terminals. The device can also include a conductive clip electrically coupling the first negative power supply terminal with the second negative power supply terminal via a conductive bridge. A portion of the conductive bridge can be arranged in a second plane that is parallel to, and non-coplanar with the first plane.

SEMICONDUCTOR DEVICE PACKAGE ASSEMBLIES AND METHODS OF MANUFACTURE

In general aspect, a semiconductor device package can include a substrate and a semiconductor die disposed on and coupled with the substrate. The semiconductor device package can further include a leadframe having an indentation defined therein, at least a portion of the indentation being disposed on and coupled with the semiconductor die via a conductive adhesive.

STRAY INDUCTANCE REDUCTION IN PACKAGED SEMICONDUCTOR DEVICES

In a general aspect, a semiconductor device can include a substrate and a positive power supply terminal electrically coupled with the substrate, the positive power supply terminal being arranged in a first plane. The device can also include a first negative power supply terminal, laterally disposed from the positive power supply terminal and arranged in the first plane. The device can further include a second negative power supply terminal, laterally disposed from the positive power supply terminal and arranged in the first plane. The positive power supply terminal can be disposed between the first and second negative power supply terminals. The device can also include a conductive clip electrically coupling the first negative power supply terminal with the second negative power supply terminal via a conductive bridge. A portion of the conductive bridge can be arranged in a second plane that is parallel to, and non-coplanar with the first plane.

Semiconductor Package and Method of Forming a Semiconductor Package

A semiconductor package is provided. The semiconductor package may include at least one semiconductor chip including a contact pad configured to conduct a current, a conductor element, wherein the conductor element is arranged laterally overlapping the contact pad and with a distance to the contact pad, at least one electrically conductive spacer, a first adhesive system configured to electrically and mechanically connect the at least one electrically conductive spacer with the contact pad, and a second adhesive system configured to electrically and mechanically connect the at least one electrically conductive spacer with the conductor element, wherein the conductor element is electrically conductively connected to a clip or is at least part of a clip, and wherein the spacer is configured to electrically conductively connect the contact pad with the laterally overlapping portion of the conductor element.

Semiconductor device package assemblies with direct leadframe attachment

In general aspect, a semiconductor device package can include a substrate and a semiconductor die disposed on and coupled with the substrate. The semiconductor device package can further include a leadframe having an indentation defined therein, at least a portion of the indentation being disposed on and coupled with the semiconductor die via a conductive adhesive.