A display device and a method of fabricating a display device are provided. A display device includes: a first electrode and a second electrode on a substrate and spaced apart from each other; a third electrode on the substrate; and a first light emitting element between the first electrode and the second electrode. The first electrode, the second electrode, and the third electrode may be arranged on a same layer. The third electrode may be electrically separated from the first electrode and the second electrode.

A method of forming a charge pattern on a microchip includes depositing a material on the surface of the microchip, and immersing the microchip in a fluid to develop charge in or on the material through interaction with the surrounding fluid.

A display device includes first and second electrodes disposed on a substrate, the first and second electrodes extending in a direction and being parallel to each other, a first insulating layer disposed on the first and second electrodes, light-emitting elements disposed on the first insulating layer, the light-emitting elements having first end portions disposed on the first electrode and second end portions disposed on the second electrode, and a partition disposed on the first insulating layer and being parallel to the first electrode, the partition including a first part that overlaps the light-emitting elements, and second parts that do not overlap the light-emitting elements, wherein a vertical distance from a top surface of the first electrode to a top surface of the first part is equal to a vertical distance from the top surface of the first electrode to top surfaces of the second parts.

A method of forming a charge pattern on a microchip includes depositing a first material on an insulator surface of the microchip, depositing a material having capability of forming a self-assembled monolayer on the other material, wherein the material comprises at least one material selected from the group consisting of: octadecyltrichlorosilane, phenethyltrichlorosilane, hexamethyldisilazane, allyltrimethoxysilane, or perfluorooctyltrichlorosilanem, and patterning the self-assembled monolayer to reveal a portion of the first material. A method of forming a charge pattern in a microchip includes depositing a first material as one of either a solution processed material or a vapor deposited material to generate a first polarity or first magnitude of charge, depositing a second material as a vapor deposited material to generate a second polarity or second magnitude of charge, and immersing the microchip in a non-polar fluid comprising one selected from the group consisting of: an isoparafinnic liquid, a hydrocarbon liquid and dodecane.

Disclosed are methods and systems of controlling the placement of micro-objects on the surface of a micro-assembler. Control patterns may be used to cause electrodes of the micro-assembler to generate dielectrophoretic (DEP) and electrophoretic (EP) forces which may be used to manipulate, move, position, or orient one or more micro-objects on the surface of the micro-assembler. The control patterns may be part of a library of control patterns.

A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205′) on the receiving substrate (204).

The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.

The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate; irradiating the original substrate with laser from the original substrate side to lift-off the micro-LEDs from the original substrate; bring the micro-LEDs into contact with pads preset on a receiving substrate through a contactless action.

Disclosed are methods and systems of controlling the placement of micro-objects on the surface of a micro-assembler. Control patterns may be used to cause electrodes of the micro-assembler to generate dielectrophoretic (DEP) and electrophoretic (EP) forces which may be used to manipulate, move, position, or orient one or more micro-objects on the surface of the micro-assembler. The control patterns may be part of a library of control patterns.