A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. A first support frame is disposed over the first substrate. The first support frame has a horizontal support channel extending across the first substrate and a vertical support brace extending from the horizontal support channel to the first substrate. The first support frame can have a vertical shielding partition extending from the horizontal support channel to the first substrate. An encapsulant is deposited over the first electrical component and first substrate and around the first support frame. A second electrical component is disposed over the first electrical component. A second substrate is disposed over the first support frame. A second electrical component is disposed over the second substrate. A third substrate is disposed over the second substrate. A second support frame is disposed over the second substrate.

A device die including a first semiconductor die, a second semiconductor die, an anti-arcing layer and a first insulating encapsulant is provided. The second semiconductor die is stacked over and electrically connected to the first semiconductor die. The anti-arcing layer is in contact with the second semiconductor die. The first insulating encapsulant is disposed over the first semiconductor die and laterally encapsulates the second semiconductor die. Furthermore, methods for fabricating device dies are provided.

Bond pads for semiconductor die assemblies, and associated methods and systems are disclosed. In one embodiment, a semiconductor die assembly includes a first semiconductor die including a first bond pad on a first side of the first semiconductor die. The semiconductor die assembly further includes a second semiconductor die including a second bond pad on a second side of the second semiconductor die. The first bond pad is aligned and bonded to the second bond pad at a bonding interface between the first and second bond pads, and at least one of the first and second bond pads include a first metal and a second metal different than the first metal. Further, the first metal is located at the bonding interface and the second metal has a first thickness corresponding to at least one-fourth of a second thickness of the first or second bond pad.

A semiconductor package includes a logic die surrounded by a molding compound; a memory die disposed in proximity to the logic die; a plurality of vias around the logic die for electrically connecting the logic die to the memory die. Each of the plurality of vias has an oval shape or a rectangular shape when viewed from above. The vias have a horizontal pitch along a first direction and a vertical pitch along a second direction. The vertical pitch is greater than the horizontal pitch.

Provided is a fan-out semiconductor package including a package body having a fan-in region and a fan-out region, the fan-out region surrounding the fan-in region and including a body wiring structure; a fan-in chip structure in the fan-in region, the fan-in chip structure comprising a chip and a chip wiring structure on a top surface of the chip; a first redistribution structure on a bottom surface of the package body and a bottom surface of the fan-in chip structure, the first redistribution structure comprising first redistribution elements extending towards the fan-out region; and a second redistribution structure on a top surface of the package body and a top surface of the chip wiring structure, the second redistribution structure comprising second redistribution elements extending towards the fan-out region.

An integrated circuit device includes: a lower memory stack including a plurality of lower word lines located on a substrate, an upper memory stack located on the lower memory stack and including a plurality of upper word lines, at least one first lower interconnection layer extending in a horizontal direction at a first vertical level between the lower memory stack and the upper memory stack, and configured to be electrically connected to at least one lower word line selected from the plurality of lower word lines, a separate insulating film covering at least one first lower interconnection layer, and at least one first upper interconnection layer extending in the horizontal direction at a second vertical level higher than the upper memory stack, and configured to be electrically connected to at least one upper word line selected from the upper word lines.

A semiconductor package including a semiconductor chip, an interposer on the semiconductor chip, and a molding layer covering at least a portion of the semiconductor chip and at least a portion of the interposer may be provided. The interposer includes a interposer substrate and a heat dissipation pattern penetrating the interposer substrate and electrically insulated from the semiconductor chip. The heat dissipation pattern includes a through electrode disposed in the interposer substrate and an upper pad disposed on an upper surface of the interposer substrate and connected to the through electrode. The molding layer covers at least a portion of a sidewall of the upper pad and the upper surface of the interposer substrate. At least a portion of an upper surface of the upper pad is not covered by the molding layer.

A discrete three-dimensional (3-D) processor comprises first and second dice. The first die comprises 3-D memory (3D-M) arrays, whereas the second die comprises logic circuits and at least an off-die peripheral-circuit component of the 3D-M array(s). Typical off-die peripheral-circuit component could be an address decoder, a sense amplifier, a programming circuit, a read-voltage generator, a write-voltage generator, a data buffer, or a portion thereof.

An electronic package includes a patterned conductive layer and at least one conductive protrusion on the patterned conductive layer. The at least one conductive protrusion has a first top surface. The patterned conductive layer and the at least one conductive protrusion define a space. The electronic package further includes a first electronic component disposed in the space and a plurality of conductive pillars on the first electronic component. The conductive pillars have a second top surface. The first top surface is substantially level with the second top surface.

A package includes at least one memory component and an insulating encapsulation. The at least one memory component includes a stacked memory structure and a plurality of conductive posts. The stacked memory structure is laterally encapsulated in a molding compound. The conductive posts are disposed on an upper surface of the stacked memory structure. The upper surface of the stacked memory structure is exposed from the molding compound. The insulating encapsulation encapsulates the at least one memory component. The top surfaces of the conductive posts are exposed form the insulating encapsulation. A material of the molding compound is different a material of the insulating encapsulation.