Certain aspects of the present disclosure generally relate to an integrated circuit assembly. One example integrated circuit assembly generally includes a first reconstituted assembly, a second reconstituted assembly, and a third reconstituted assembly. The first reconstituted assembly comprises at least one passive component and a first bonding layer. The second reconstituted assembly is disposed above the first reconstituted assembly and comprises one or more first semiconductor dies, a second bonding layer bonded to the first bonding layer of the first reconstituted assembly, and a third bonding layer. The third reconstituted assembly is disposed above the second reconstituted assembly and comprises one or more second semiconductor dies and a fourth bonding layer bonded to the third bonding layer of the second reconstituted assembly.

An electronic structure includes a packaging structure, a circuit pattern structure, an underfill and a protrusion structure. The circuit pattern structure is disposed over the packaging structure. A gap is between the circuit pattern structure and the packaging structure. The underfill is disposed in the gap. The protrusion structure is disposed in the gap, and is configured to facilitate the distributing of the underfill in the gap.

In a semiconductor device, a first package is provided with a first substrate under which a semiconductor chip configured to output a signal and a first wiring electrically connected to the semiconductor chip are arranged. A second package is provided with a second substrate above which a processing circuit configured to process the output signal, a second wiring electrically connected to the processing circuit, and an encapsulant configured to seal the processing circuit are arranged, the semiconductor chip and the encapsulant being arranged to face each other in a non-contact manner. A connection portion electrically connects the first wiring and the second wiring.

A semiconductor device and method of manufacture are provided whereby an interposer and a first semiconductor device are placed onto a carrier substrate and encapsulated. The interposer comprises a first portion and conductive pillars extending away from the first portion. A redistribution layer located on a first side of the encapsulant electrically connects the conductive pillars to the first semiconductor device.

Systems and devices for enabling the use of SIP subsystems to make a configurable system having a unique interconnecting scheme creates appropriate connections between the SIP components and/or subsystems such that desired characteristics and features for the configurable system are provided.

A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

A vertical-wire package-in-package includes at least two memory-die stacks that form respective memory modules that are stacked vertically on a bond-wire board. Each memory die in the memory-die stack includes a vertical bond wire that emerges from a matrix for connection. The matrix encloses the memory-die stack, the spacer, and a redistribution layer. At least two memory modules are assembled in a vertical-wire package-in-package.

Disclosed herein are integrated circuit (IC) packages, antenna boards, antenna modules, and communication devices (e.g., for millimeter wave communications). For example, in some embodiments, an antenna module may include: a logic die; a radio frequency front-end (RFFE) die in electrical communication with the logic die; and an antenna patch, wherein the RFFE die is closer to the antenna patch than the logic die is to the antenna patch.

Disclosed herein are integrated circuit (IC) packages, antenna boards, antenna modules, and communication devices (e.g., for millimeter wave communications). For example, in some embodiments, an antenna module may include: a logic die; a radio frequency front-end (RFFE) die in electrical communication with the logic die; and an antenna patch, wherein the RFFE die is closer to the antenna patch than the logic die is to the antenna patch.

A semiconductor device is provided. The semiconductor device includes a first hard macro; a second hard macro spaced apart from the first hard macro in a first direction by a first distance; a head cell disposed in a standard cell area between the first hard macro and the second hard macro, the head cell being configured to perform power gating of a power supply voltage provided to one from among the first hard macro and the second hard macro; a plurality of first ending cells disposed in the standard cell area adjacent to the first hard macro; and a plurality of second ending cells disposed in the standard cell area adjacent to the second hard macro, the head cell not overlapping the plurality of first ending cells and the plurality of second ending cells.