A semiconductor package for mounting to a printed circuit board (PCB) includes a case comprising a ceramic base, a semiconductor die in the case, a mounting pad under the ceramic base and coupled to the semiconductor die through at least one opening in the ceramic base. The mounting pad includes at least one layer having a coefficient of thermal expansion (CTE) approximately matching a CTE of the ceramic base. The mounting pad includes at least one layer having a low-yield strength of equal to or less than 200 MPa. The mounting pad includes at least one copper layer and at least one molybdenum layer. The semiconductor package also includes a bond pad coupled to another mounting pad under the ceramic base through a conductive slug in the ceramic base.

Provided is a semiconductor laser device having enhanced heat dissipation properties. A semiconductor laser device 10 comprises a stem 11, a cap 12 that is attached to an upper surface of the stem 11, a semiconductor laser element 13, and a power-feeding member 14 that is at least partially buried in the stem 11. The power-feeding member 14 comprises an element-side terminal 32 that is electrically connected to the semiconductor laser element 13, and an external terminal 33. The external terminal 33 of the power-feeding member 14 is exposed on a side surface or the upper surface of the stem 11, and an attaching surface 11b that is attached to a mounting object is provided in a lower surface of the stem 11.

A device (2) is provided on an upper surface of the device substrate (1). A sealing frame (16) made of a non-electrolytic plating reactive catalyst metal is provided on the upper surface of the device substrate (1) and surrounds the device (2). An upper surface of the device substrate (1) and a lower surface of the cap substrate (10) are joined in a hollow state through the sealing frame (16). A plurality of electrodes (8,11,12) are connected to the device (2) and extended out of the device substrate (1) and the cap substrate (10). A metal film (20) is provided on an outer surface of the sealing frame (16) and not provided on the device substrate (1) and the cap substrate (10).

A header, with improved cooling for electronic components for radio frequency signal transmission, for an electronic component for radio frequency data transfer, includes: a metallic base body including a plurality of electrical feedthroughs; a thermoelectric cooling element having one side bearing on the base body and an opposite side for mounting the electronic component; a radio frequency line to the electronic component being on the side for mounting the electronic component, with a ground conductor that is electrically connected to the metallic base body, the electrical connection to the metallic base body including a telluride element.

The present disclosure relates to components, such as base bodies, for feed-through elements including a metallic base body, at least one through-opening for receiving a functional element in a fixing material, such as an electrically insulating fixing material, and at least one conductor, which is connected electrically conductively to the base body by a soldered connection. The soldered connection includes a metallic solder material that covers a surface region of the base body and thus forms a soldering region on a surface of the base body. The base body has, at least in the soldering region, a microstructuring that includes at least depressions in the surface of the base body. The present disclosure similarly relates to methods for producing such base bodies and to applications thereof.

The present disclosure relates to components, such as base bodies, for feed-through elements including a metallic base body, at least one through-opening for receiving a functional element in a fixing material, such as an electrically insulating fixing material, and at least one conductor, which is connected electrically conductively to the base body by a soldered connection. The soldered connection includes a metallic solder material that covers a surface region of the base body and thus forms a soldering region on a surface of the base body. The base body has, at least in the soldering region, a microstructuring that includes at least depressions in the surface of the base body. The present disclosure similarly relates to methods for producing such base bodies and to applications thereof.

A semiconductor package includes a flat plate-shaped terminal integrally formed with a housing portion for a semiconductor chip and a rod-shaped terminal pin that penetrates through a through-hole of the plate-shaped terminal. On a surface of the plate-shaped terminal, a resin guide portion for guiding the terminal pin to the through-hole of the plate-shaped terminal is provided. The resin guide portion is a portion of the housing portion and has a through-hole that is continuous with the through-hole of the plate-shaped terminal. During assembly of the semiconductor package, the terminal pin is inserted into the through-hole of the plate-shaped terminal, via the through-hole of the resin guide portion. A sidewall of the through-hole of the resin guide portion and a sidewall of the through-hole of the plate-shaped terminal have a same slope and form a single continuous surface; a border between the through-hole of the resin guide portion and the through-hole of the plate-shaped terminal is free of any step.

A stem for a semiconductor package, includes a plate, a frame, positioned on an outer periphery of the plate in a plan view, and bonded to the plate, and a lead terminal held in a state insulated from the plate and the frame. The plate protrudes from a top surface and a bottom surface of the frame, and a protruding amount of the plate from the top surface and a protruding amount of the plate from the bottom surface are the same.

A stem for a semiconductor package, includes an eyelet having a first surface, a second surface opposite to the first surface, and a through-hole penetrating the eyelet from the first surface to the second surface, a metal base bonded to the second surface of the eyelet so as to cover one end of the through-hole, and a metal block having one end thereof inserted into the through-hole and bonded to the metal base inside the through-hole, and another end projecting from the first surface of the eyelet and including a device mounting surface on which a semiconductor device is mounted. The metal base has a thermal conductivity higher than or equal to a thermal conductivity of the eyelet, and a surface at the one end of the metal block matches the second surface of the eyelet.

A semiconductor device comprises a semiconductor die and an integrated capacitor formed over the semiconductor die. The integrated capacitor is configured to receive a high voltage signal. A transimpedance amplifier is formed in the semiconductor die. An avalanche photodiode is disposed over or adjacent to the semiconductor die. The integrated capacitor is coupled between the avalanche photodiode and a ground node. A resistor is coupled between a high voltage input and the avalanche photodiode. The resistor is an integrated passive device (IPD) formed over the semiconductor die. A first terminal of the integrated capacitor is coupled to a ground voltage node. A second terminal of the integrated capacitor is coupled to a voltage greater than 20 volts. The integrated capacitor comprises a plurality of interdigitated fingers in one embodiment. In another embodiment, the integrated capacitor comprises a plurality of vertically aligned plates.