A packaging fill material for electrical packaging includes a base material, and a plurality of frangible capsules distributed in the base material. Each frangible capsule includes a liquid penetrant contrast agent therein having a different radiopacity than the base material. In response to a crack forming in the packaging fill material, at least one of the plurality of frangible capsules opens, releasing the liquid penetrant contrast agent into the crack. Cracks can be more readily identified in an IC package including the packaging fill material. The liquid penetrant contrast agent may have a radiopacity that is higher than the base material. Inspection can be carried out using electromagnetic analysis using visual inspection or digital analysis of the results to more easily identify cracks.

A packaging fill material for electrical packaging includes a base material, and a plurality of frangible capsules distributed in the base material. Each frangible capsule includes a liquid penetrant contrast agent therein having a different radiopacity than the base material. In response to a crack forming in the packaging fill material, at least one of the plurality of frangible capsules opens, releasing the liquid penetrant contrast agent into the crack. Cracks can be more readily identified in an IC package including the packaging fill material. The liquid penetrant contrast agent may have a radiopacity that is higher than the base material. Inspection can be carried out using electromagnetic analysis using visual inspection or digital analysis of the results to more easily identify cracks.

A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

Technologies for cooling conformal power delivery structures are disclosed. In one embodiment, an integrated circuit component has a die with a backside power plane mated to it. A lid of the integrated circuit component is mated with the backside power plane, forming a sealed cavity. The lid has an inlet and an outlet, and a channel is defined in the lid for liquid coolant to flow from the inlet, across the backside power plane, and to the outlet. The liquid coolant directly contacts the backside power plane, efficiently removing heat from the backside power plane.

Embodiments described herein may be related to apparatuses, processes, and techniques for a dam structure on a substrate that is proximate to a die coupled with the substrate, where the dam decreases the risk of die shift during encapsulation material flow over the die during the manufacturing process. The dam structure may fully encircle the die. During encapsulation material flow, the dam structure creates a cavity that moderates the different flow rates of material that otherwise would exert different pressures the sides of the die and cause to die to shift its position on the substrate. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques for a dam structure on a substrate that is proximate to a die coupled with the substrate, where the dam decreases the risk of die shift during encapsulation material flow over the die during the manufacturing process. The dam structure may fully encircle the die. During encapsulation material flow, the dam structure creates a cavity that moderates the different flow rates of material that otherwise would exert different pressures the sides of the die and cause to die to shift its position on the substrate. Other embodiments may be described and/or claimed.

A heat dissipation structure includes a peripheral substrate, a chip substrate, a thermally conductive material, and a heat sink. One end of the peripheral substrate is connected to the chip substrate along a periphery of the chip substrate, and the heat sink is connected to the other end of the peripheral substrate. Additionally, an accommodation space is defined among the peripheral substrate, the heat sink, and the chip substrate. The thermally conductive material is filled in the accommodation space, and the chip substrate is configured to place a silicon die. When power consumption of the chip increases, the heat generated by the chip may be dissipated by using the silicon die and the thermally conductive material, so that heat dissipation efficiency is improved, and a heat dissipation effect is improved.

An antenna device includes a package, a radiating element, and a director. The package includes a radio frequency (RF) die and a molding compound in contact with a sidewall of the RF die. The radiating element is in the molding compound and electrically coupled to the RF die. The director is in the molding compound, wherein the radiating element is between the director and the RF die, and a top of the radiating element is substantially coplanar with a top of the director.

Various embodiments of the present disclosure are directed towards a memory device including a free layer overlying a reference layer. A tunnel barrier layer overlies the reference layer disposed over a semiconductor substrate. The free layer overlies the tunnel barrier layer, and a capping layer overlies the free layer. A shunting structure includes a conductive material that vertically extends continuously from an outer sidewall of the free layer to an outer sidewall of the capping layer.