H01L23/26

Repackaged integrated circuit assembly method
20180005910 · 2018-01-04 · ·

A method is provided. The method includes one or more of extracting a die from an original packaged integrated circuit, modifying the extracted die, reconditioning the modified extracted die, placing the reconditioned die into a cavity of a hermetic package base, bonding a plurality of bond wires between reconditioned die pads of the reconditioned die to leads of the hermetic package base or downbonds to create an assembled hermetic package base, and sealing a hermetic package lid to the assembled hermetic package base to create a new packaged integrated circuit. Modifying the extracted die includes removing the one or more ball bonds on the one or more die pads. Reconditioning the modified extracted die includes adding a sequence of metallic layers to bare die pads of the modified extracted die. The extracted die is a fully functional semiconductor die with one or more ball bonds on one or more die pads of the extracted die.

Mitigating moisture-driven degradation of features designed to prevent structural failure of semiconductor wafers

Moisture-driven degradation of a crack stop in a semiconductor die is mitigated by forming a groove in an upper surface of the die between an edge of the die and the crack stop; entirely filling the groove with a moisture barrier material; preventing moisture penetration of the semiconductor die by presence of the moisture barrier material; and dissipating mechanical stress in the moisture barrier material without presenting a stress riser in the bulk portion of the die. The moisture barrier material is at least one of moisture-absorbing, moisture adsorbing, and hydrophobic.

Mitigating moisture-driven degradation of features designed to prevent structural failure of semiconductor wafers

Moisture-driven degradation of a crack stop in a semiconductor die is mitigated by forming a groove in an upper surface of the die between an edge of the die and the crack stop; entirely filling the groove with a moisture barrier material; preventing moisture penetration of the semiconductor die by presence of the moisture barrier material; and dissipating mechanical stress in the moisture barrier material without presenting a stress riser in the bulk portion of the die. The moisture barrier material is at least one of moisture-absorbing, moisture adsorbing, and hydrophobic.

Semiconductor-on-insulator (SOI) substrate and method for forming

Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.

Crack identification in IC chip package using encapsulated liquid penetrant contrast agent
11543322 · 2023-01-03 · ·

A packaging fill material for electrical packaging includes a base material, and a plurality of frangible capsules distributed in the base material. Each frangible capsule includes a liquid penetrant contrast agent therein having a different radiopacity than the base material. In response to a crack forming in the packaging fill material, at least one of the plurality of frangible capsules opens, releasing the liquid penetrant contrast agent into the crack. Cracks can be more readily identified in an IC package including the packaging fill material. The liquid penetrant contrast agent may have a radiopacity that is higher than the base material. Inspection can be carried out using electromagnetic analysis using visual inspection or digital analysis of the results to more easily identify cracks.

Crack identification in IC chip package using encapsulated liquid penetrant contrast agent
11543322 · 2023-01-03 · ·

A packaging fill material for electrical packaging includes a base material, and a plurality of frangible capsules distributed in the base material. Each frangible capsule includes a liquid penetrant contrast agent therein having a different radiopacity than the base material. In response to a crack forming in the packaging fill material, at least one of the plurality of frangible capsules opens, releasing the liquid penetrant contrast agent into the crack. Cracks can be more readily identified in an IC package including the packaging fill material. The liquid penetrant contrast agent may have a radiopacity that is higher than the base material. Inspection can be carried out using electromagnetic analysis using visual inspection or digital analysis of the results to more easily identify cracks.

X-ray ID tag hydrogen getter

A medical device including a hybrid circuitry assembly, a core assembly housing having an inside surface, and a tag/getter assembly. The core assembly housing to enclose the hybrid circuitry assembly, and the tag/getter assembly to be situated adjacent the inside surface of the core assembly housing. The tag/getter assembly including an identification tag and a hydrogen getter.

Thin film getter and manufacturing method therefor

A thin film getter is provided. The thin film getter comprises a substrate and an absorption layer on the substrate, wherein the absorption layer comprises a getter material for absorbing target gas and an auxiliary material for providing a moving path of the target gas, and the getter material can be divided into a plurality of getter regions by the auxiliary material.

Method for fabricating a detection device comprising a step of direct bonding of a thin sealing layer provided with a getter material

The invention relates to a method for fabricating a thermal detector (1), comprising the following steps: forming a first stack (10), comprising a thermal detector (20), a mineral sacrificial layer (15) and a thin encapsulation layer (16) having a lateral vent (17.1); forming a second stack (30), comprising a thin sealing layer (33) and a getter portion (34); eliminating the mineral sacrificial layer (15); assembling by direct bonding the thin sealing layer (33), brought into contact with the thin encapsulation layer (16) and blocking the lateral vent (17.1), the getter portion (34) being located in the lateral vent (17.1).

OMNI DIRECTIONAL INTERCONNECT WITH MAGNETIC FILLERS IN MOLD MATRIX

Various embodiments disclosed relate to methods of making omni-directional semiconductor interconnect bridges. The present disclosure includes semiconductor assemblies including a mold layer having mold material, a first filler material dispersed in the mold material, and a second filler material dispersed in the mold material, wherein the second filler material is heterogeneously dispersed.