A metal base plate is rectangular in plan view, has a joining region set on a front surface, and has a center line, which is parallel to a pair of short sides that face each other, set in a middle interposed between the pair of short sides. A ceramic circuit board includes a ceramic board that is rectangular in plan view, a circuit pattern that is formed on a front surface of the ceramic board and has a semiconductor chip joined thereto, and a metal plate that is formed on a rear surface of the ceramic board and is joined to the joining region by solder. Here, the solder contains voids and is provided with a stress relieving region at one edge portion that is away from the center line. A density of voids included in the stress relieving region is higher than other regions of the solder.

A semiconductor device package includes a semiconductor die having two largest dimensions that define a major plane, a packaging material enclosing the semiconductor die, a plurality of contacts on a first exterior surface of the semiconductor device package that is parallel to the major plane, the first exterior surface defining a bottom of the semiconductor device package, and a pedestal of semiconductor material above the semiconductor die in a thermally-conductive, electrically non-conductive relationship with the semiconductor die. The semiconductor material of the pedestal may be doped to provide electromagnetic shielding of the semiconductor die.

A circuit module includes a substrate with a patterned metal surface. The patterned metal surface includes a conductive terminal pad, a first conductive pad, and a second conductive pad that is non-adjacent to the conductive terminal pad. A first circuit portion is assembled on the first conductive pad and a second circuit portion is assembled on the second conductive pad. A conductive bridge electrically couples the conductive terminal pad and the second conductive pad. The conductive bridge includes an elevated span extending above and across the first conductive pad.

Articles, devices, and methods including anisotropic van der Waals thermal conductors are described.

Articles, devices, and methods including anisotropic van der Waals thermal conductors are described.

Some implementations of the disclosure are directed to a thermal interface material. In some implementations, a method comprises: applying a solder paste between a surface of a heat generating device and a surface of a heat transferring device to form an assembly; and reflow soldering the assembly to form a solder composite, wherein the solder composite provides a thermal interface between the heat generating device and the heat transferring device, wherein the solder paste comprises: a solder powder; particles having a higher melting temperature than a soldering temperature of the solder paste, wherein the solder paste has a volume ratio of solder powder to high melting temperature particles between 5:1 and 1:1.5; and flux.

A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

Systems for cooling semiconductor devices that can comprise a heatsink and a cleaning element for the heatsink. The heatsink can have fins spaced apart from each other by channels. The cleaning element can have a base and one or more arms extending from the base. The cleaning element can be positioned with respect to the heatsink such that each arm is aligned with a corresponding channel between the fins, and the arms are moveable between a flow configuration in which the arms are in the channels and a cleaning configuration in which the arms are outside of the channels.

Provided is anisotropic graphite for producing an anisotropic graphite composite having excellent thermal conduction property and excellent long-term reliability as a heat dissipating member. Given an X axis, a Y axis orthogonal to the X axis, and a Z axis perpendicular to a plane defined by the X axis and the Y axis, and a crystal orientation plane of the anisotropic graphite is parallel to an X-Z plane, and a specific number of holes each having a specific size are formed in at least one surface out of surfaces of the anisotropic graphite which are parallel to an X-Y plane.