A sensor device according to the present disclosure includes: a Peltier element; a sensor element thermally connected to a cooling surface of the Peltier element; and a package substrate that is made of ceramic, is thermally connected to a heat dissipation surface of the Peltier element, and accommodates the Peltier element and the sensor element.

An integrated circuit (IC) device includes a chip having a semiconductor substrate and a thermoelectric module embedded in the semiconductor substrate, where the thermoelectric module includes a first semiconductor structure electrically connected to a second semiconductor structure, where a bottom portion of thermoelectric module extends through a thickness of the semiconductor substrate, and where the first semiconductor structure and the second semiconductor structure include dopants of different conductivity types.

A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

A circuit board with improved heat dissipation function and a method for manufacturing the circuit board are provided. The method includes providing a first metal layer defining a first slot; forming a first adhesive layer in the first slot; electroplating copper on each first pillar to form a first heat conducting portion; forming a first insulating layer on the first adhesive layer having the first heat conducting portion, and defining a first blind hole in the first insulating layer; filling the first blind hole with thermoelectric separation metal to form a second heat conducting portion; forming a first wiring layer on the first insulating layer; forming a second insulating layer on the first wiring layer, defining a second blind hole on the second insulating layer; electroplating copper in the second blind hole to form a third heat conducting portion; mounting an electronic component on the second insulating layer.

A temperature control device (2) comprises a number of active thermal sites (6) disposed at respective locations on a substrate (10), each comprising a heating element (13) for applying a variable amount of heat to a corresponding site of a medium and a thermal insulation layer (16) disposed between the heating element and the substrate. At least one passive thermal region (8) is disposed between the active thermal sites (6) on the substrate (10), each passive thermal region (8) comprising a thermal conduction layer (18) for conducting heat from a corresponding portion of the medium to the substrate (10). The thermal conduction layer (18) has a lower thermal resistance in a direction perpendicular to a plane of the substrate (10) than the thermal insulation layer (16). This enables precise control over both heating and cooling of individual sites in a flowing fluid, for example.

A temperature control device (2) comprises a number of active thermal sites (6) disposed at respective locations on a substrate (10), each comprising a heating element (13) for applying a variable amount of heat to a corresponding site of a medium and a thermal insulation layer (16) disposed between the heating element and the substrate. At least one passive thermal region (8) is disposed between the active thermal sites (6) on the substrate (10), each passive thermal region (8) comprising a thermal conduction layer (18) for conducting heat from a corresponding portion of the medium to the substrate (10). The thermal conduction layer (18) has a lower thermal resistance in a direction perpendicular to a plane of the substrate (10) than the thermal insulation layer (16). This enables precise control over both heating and cooling of individual sites in a flowing fluid, for example.

An integrated circuit (IC) socket comprising a housing with a land side, an opposing die side, and sidewalls around a perimeter of the housing. The housing comprises a first dielectric. A plurality of socket pins extends from the land side of the housing through socket pin holes in the housing over the die side of the housing. A second dielectric is within the interstitial regions between the socket pins and sidewalls of the socket pin holes. A frame structure extends around at least a portion of the perimeter of the housing, and a mesh structure is embedded within the first dielectric. The mesh structure has plurality of mesh filaments extending between the plurality of socket pin holes and coupled to the frame structure.

Provided is a semiconductor package. The semiconductor package comprises a semiconductor chip on a substrate, a voltage measurement circuit configured to measure an external voltage to be input into the semiconductor chip and a thermoelectric module configured to convert heat released from the semiconductor chip into an auxiliary power, and configured to apply the auxiliary power to the semiconductor chip, the thermoelectric module being separated from the voltage measurement circuit, wherein the voltage measurement circuit is configured to control the thermoelectric module to apply the auxiliary power to the semiconductor chip in response to a change in the external voltage.

Provided with a semiconductor apparatus which is able to be miniaturized and is provided with a Peltier element. The semiconductor apparatus is provided with a semiconductor substrate and the Peltier element which is disposed facing the semiconductor substrate. The Peltier element has a first substrate and a thermoelectric semiconductor which is disposed between the first substrate and the semiconductor substrate. The semiconductor substrate has a first electrode provided on a surface side facing the first substrate. The first substrate has a second electrode provided on a surface side facing the semiconductor substrate. The first electrodes and the second electrodes are each connected to the thermoelectric semiconductor.